Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation

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Forward voltage degradation has been reduced by fabricating diodes on the (000-1)C-face. The reverse recovery characteristics of the 4H-SiC pin diode on the (000-1)C-face have been investigated. The pin diode on the C-face has superior potential to that on the Si-face among all parameters of the reverse recovery characteristics. The pin diode on the Si-face after conducting a current stress test tends to exhibit a fast turn-off as compared with that before conducting the stress test. On the C-face, however, there is little difference in reverse recovery characteristics between before and after conducting the current stress test.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1359-1362

Citation:

K. Nakayama et al., "Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation", Materials Science Forum, Vols. 527-529, pp. 1359-1362, 2006

Online since:

October 2006

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$38.00

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