Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation
Forward voltage degradation has been reduced by fabricating diodes on the (000-1)C-face. The reverse recovery characteristics of the 4H-SiC pin diode on the (000-1)C-face have been investigated. The pin diode on the C-face has superior potential to that on the Si-face among all parameters of the reverse recovery characteristics. The pin diode on the Si-face after conducting a current stress test tends to exhibit a fast turn-off as compared with that before conducting the stress test. On the C-face, however, there is little difference in reverse recovery characteristics between before and after conducting the current stress test.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
K. Nakayama et al., "Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation", Materials Science Forum, Vols. 527-529, pp. 1359-1362, 2006