Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation

Koji Nakayama; Yoshitaka Sugawara; R. Ishii; Hidekazu Tsuchida; Toshiyuki Miyanagi; Isaho Kamata; Tomonori Nakamura

doi:10.4028/www.scientific.net/MSF.527-529.1359

Paper Titles

About the Nature of Recombination Current in 4H-SiC pn Structures
p.1343

Charge Induced in 6H-SiC PN Diodes by Irradiation of Oxygen Ion Microbeams
p.1347

Demonstration of a 4H SiC Betavoltaic Cell
p.1351

High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications
p.1355

Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation
p.1359

Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill
p.1363

Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing
p.1367

Demonstration of High-Voltage 4H-SiC Bipolar RF Power Limiter
p.1371

Investigation of Packaged High-Voltage 4H SiC pin Diodes in the 20-700 °C Temperature Range
p.1375

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Dynamic Characteristics of 4H-SiC pin Diode on...

Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation

Abstract:

Forward voltage degradation has been reduced by fabricating diodes on the (000-1)C-face. The reverse recovery characteristics of the 4H-SiC pin diode on the (000-1)C-face have been investigated. The pin diode on the C-face has superior potential to that on the Si-face among all parameters of the reverse recovery characteristics. The pin diode on the Si-face after conducting a current stress test tends to exhibit a fast turn-off as compared with that before conducting the stress test. On the C-face, however, there is little difference in reverse recovery characteristics between before and after conducting the current stress test.

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Materials Science Forum (Volumes 527-529)

Pages:

1359-1362

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1359

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Online since:

October 2006

Authors:

Koji Nakayama, Yoshitaka Sugawara, R. Ishii, Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Tomonori Nakamura

Keywords:

C-Face, Dynamic Characteristic, Forward Voltage Degradation, PiN Diode

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