Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill

Peter A. Losee; Can Hua Li; R.J. Kumar; T. Paul Chow; I. Bhat; Ronald J. Gutmann; Robert E. Stahlbush

doi:10.4028/www.scientific.net/MSF.527-529.1363

Paper Titles

Charge Induced in 6H-SiC PN Diodes by Irradiation of Oxygen Ion Microbeams
p.1347

Demonstration of a 4H SiC Betavoltaic Cell
p.1351

High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications
p.1355

Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation
p.1359

Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill
p.1363

Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing
p.1367

Demonstration of High-Voltage 4H-SiC Bipolar RF Power Limiter
p.1371

Investigation of Packaged High-Voltage 4H SiC pin Diodes in the 20-700 °C Temperature Range
p.1375

CM-Wave Modulator with High-Voltage 4H SiC pin Diodes
p.1379

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Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill

Abstract:

The on-state and switching performance of high voltage 4H-SiC junction rectifiers are compared using numerical simulations and experimental characterization. Epitaxial and implanted anode PiN diodes as well as novel, advanced rectifiers have been fabricated in 4H-SiC using 110μm thick drift layers. The relatively low forward voltage drop of these epi-anode diodes (4.2V @ 100A/cm2) indicates moderate conductivity modulation, while the superior switching performance of the “MPS-like” rectifiers is demonstrated with reverse recovery characteristics at various temperatures and forward current densities.