Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill
The on-state and switching performance of high voltage 4H-SiC junction rectifiers are compared using numerical simulations and experimental characterization. Epitaxial and implanted anode PiN diodes as well as novel, advanced rectifiers have been fabricated in 4H-SiC using 110μm thick drift layers. The relatively low forward voltage drop of these epi-anode diodes (4.2V @ 100A/cm2) indicates moderate conductivity modulation, while the superior switching performance of the “MPS-like” rectifiers is demonstrated with reverse recovery characteristics at various temperatures and forward current densities.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
P. A. Losee et al., "Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill", Materials Science Forum, Vols. 527-529, pp. 1363-1366, 2006