Paper Title:
Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill
  Abstract

The on-state and switching performance of high voltage 4H-SiC junction rectifiers are compared using numerical simulations and experimental characterization. Epitaxial and implanted anode PiN diodes as well as novel, advanced rectifiers have been fabricated in 4H-SiC using 110μm thick drift layers. The relatively low forward voltage drop of these epi-anode diodes (4.2V @ 100A/cm2) indicates moderate conductivity modulation, while the superior switching performance of the “MPS-like” rectifiers is demonstrated with reverse recovery characteristics at various temperatures and forward current densities.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1363-1366
DOI
10.4028/www.scientific.net/MSF.527-529.1363
Citation
P. A. Losee, C. H. Li, R.J. Kumar, T. P. Chow, I. Bhat, R. J. Gutmann, R. E. Stahlbush, "Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill", Materials Science Forum, Vols. 527-529, pp. 1363-1366, 2006
Online since
October 2006
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Price
$35.00
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5.1: Rectifying Devices
Abstract:High-voltage 4H-SiC Junction Barrier Schottky diodes with a reverse breakdown voltage of over 4.5 kV and a turn-on voltage below 1 V have...
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