Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill

Abstract:

Article Preview

The on-state and switching performance of high voltage 4H-SiC junction rectifiers are compared using numerical simulations and experimental characterization. Epitaxial and implanted anode PiN diodes as well as novel, advanced rectifiers have been fabricated in 4H-SiC using 110μm thick drift layers. The relatively low forward voltage drop of these epi-anode diodes (4.2V @ 100A/cm2) indicates moderate conductivity modulation, while the superior switching performance of the “MPS-like” rectifiers is demonstrated with reverse recovery characteristics at various temperatures and forward current densities.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1363-1366

DOI:

10.4028/www.scientific.net/MSF.527-529.1363

Citation:

P. A. Losee et al., "Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill", Materials Science Forum, Vols. 527-529, pp. 1363-1366, 2006

Online since:

October 2006

Export:

Price:

$38.00

[1] Y. Sugawara, D. Takayama, K. Asano, R. Singh, J. Palmour, and T. Hayashi: ISPSD (2001), p.27.

[2] M. K. Das, B. Hull, J. Richmond, B. Heath, J. Sumakeris, and A. Powell: ISPSD (2005), p.299.

[3] S. Sawant and B. Jayant Baliga: ISPSD (1999), p.153.

[4] Y. Shimizu, M. Maito, S. Murakami, and Y. Terasawa: IEEE Trans. Elec. Dev. (1984), Vol. 31, p.1314.

[5] C. Li, P. Losee, J. Seiler, I. Bhat, and T.P. Chow: Mater. Sci. Forum Vols. 483-485 (2005) p.159.

[6] C. Li, I. B. Bhat, R. Wang, and J. Seiler: J. Elec. Mater. (2004), Vol. 33, p.481.

In order to see related information, you need to Login.