Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing

Lin Zhu; Peter A. Losee; T. Paul Chow; Kenneth A. Jones; Charles Scozzie; Matthew H. Ervin; Pankaj B. Shah; Michael A. Derenge; R.D. Vispute; T. Venkatesan; Anant K. Agarwal

doi:10.4028/www.scientific.net/MSF.527-529.1367

Paper Titles

Demonstration of a 4H SiC Betavoltaic Cell
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High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications
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Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation
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Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill
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Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing
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Demonstration of High-Voltage 4H-SiC Bipolar RF Power Limiter
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Investigation of Packaged High-Voltage 4H SiC pin Diodes in the 20-700 °C Temperature Range
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Numerical Investigation of SiC Devices Performance Considering the Incomplete Dopant Ionization
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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Characteristics and Ionization Coefficient...

Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing

Abstract:

4H-SiC PiN rectifiers with implanted anode and single-zone JTE were fabricated using AlN capped anneal. The surface damage during the high temperature activation anneal is significantly reduced by using AlN capped anneal. The forward drop of the PiN rectifiers at 100A/cm2 is 3.0V while the leakage current is less than 10-7A/cm2 up to 90% breakdown voltage at room temperature. With 6μm thick and 2×1016cm-3 doped drift layer, the PiN rectifiers can achieve near ideal breakdown voltage up to 1050V. Hole impact ionization rate was extracted and compared with previously reported results.

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Materials Science Forum (Volumes 527-529)

Pages:

1367-1370

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1367

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Online since:

October 2006

Authors:

Lin Zhu, Peter A. Losee, T. Paul Chow, Kenneth A. Jones, Charles Scozzie, Matthew H. Ervin, Pankaj B. Shah, Michael A. Derenge, R.D. Vispute, T. Venkatesan, Anant K. Agarwal

Keywords:

4H-SiC, AlN Capped Anneal, Ionization Coefficient, Junction Rectifiers

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