Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing

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4H-SiC PiN rectifiers with implanted anode and single-zone JTE were fabricated using AlN capped anneal. The surface damage during the high temperature activation anneal is significantly reduced by using AlN capped anneal. The forward drop of the PiN rectifiers at 100A/cm2 is 3.0V while the leakage current is less than 10-7A/cm2 up to 90% breakdown voltage at room temperature. With 6μm thick and 2×1016cm-3 doped drift layer, the PiN rectifiers can achieve near ideal breakdown voltage up to 1050V. Hole impact ionization rate was extracted and compared with previously reported results.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1367-1370

Citation:

L. Zhu et al., "Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing", Materials Science Forum, Vols. 527-529, pp. 1367-1370, 2006

Online since:

October 2006

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$38.00

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