Surface Morphology of GaN Films Grown by RF-Plasma MBE Using Lateral Overgrowth and Low-Temperature Ga-rich Condition

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In order to improve the crystal quality of MBE-grown GaN layers we employed a high temperature growth process and enhanced the lateral overgrowth. The grain size of the GaN layer was enlarged up to 2 "m in diameter. Significant improvement in the XRD characteristics was found, and the FWHM value of the asymmetric (10-12) XRD ω-scan peak became less than 400 arcsec when the layer thickness was 3 "m. Further, to planarise the surface, the low temperature gallium-rich growth process was employed and the large grooves between the grains vanished.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1493-1496

Citation:

M. Shimizu et al., "Surface Morphology of GaN Films Grown by RF-Plasma MBE Using Lateral Overgrowth and Low-Temperature Ga-rich Condition", Materials Science Forum, Vols. 527-529, pp. 1493-1496, 2006

Online since:

October 2006

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$38.00

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[10] [20] [30] [40] 0 1 2 3 Normal growth With high temperature growth.

[50] 150 250.

1 2 3 FWHM of peak in (10-12) ω-scan [arcsec] GaN layer thickness [µm] Normal growth 200 100 With high temperature growth FWHM of peak in (0002) ω-scan [arcsec].