Surface Morphology of GaN Films Grown by RF-Plasma MBE Using Lateral Overgrowth and Low-Temperature Ga-rich Condition

Mitsuaki Shimizu; Hiroshi Chonan; Guaxi Piao; Hajime Okumura; Hisayuki Nakanishi

doi:10.4028/www.scientific.net/MSF.527-529.1493

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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Surface Morphology of GaN Films Grown by RF-Plasma...

Surface Morphology of GaN Films Grown by RF-Plasma MBE Using Lateral Overgrowth and Low-Temperature Ga-rich Condition

Abstract:

In order to improve the crystal quality of MBE-grown GaN layers we employed a high temperature growth process and enhanced the lateral overgrowth. The grain size of the GaN layer was enlarged up to 2 "m in diameter. Significant improvement in the XRD characteristics was found, and the FWHM value of the asymmetric (10-12) XRD ω-scan peak became less than 400 arcsec when the layer thickness was 3 "m. Further, to planarise the surface, the low temperature gallium-rich growth process was employed and the large grooves between the grains vanished.

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Materials Science Forum (Volumes 527-529)

Pages:

1493-1496

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1493

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Online since:

October 2006

Authors:

Mitsuaki Shimizu, Hiroshi Chonan, Guaxi Piao, Hajime Okumura, Hisayuki Nakanishi

Keywords:

High Temperature Growth, Lateral Overgrowth, MBE, RF Plasma

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References

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