Surface Morphology of GaN Films Grown by RF-Plasma MBE Using Lateral Overgrowth and Low-Temperature Ga-rich Condition
In order to improve the crystal quality of MBE-grown GaN layers we employed a high temperature growth process and enhanced the lateral overgrowth. The grain size of the GaN layer was enlarged up to 2 "m in diameter. Significant improvement in the XRD characteristics was found, and the FWHM value of the asymmetric (10-12) XRD ω-scan peak became less than 400 arcsec when the layer thickness was 3 "m. Further, to planarise the surface, the low temperature gallium-rich growth process was employed and the large grooves between the grains vanished.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
M. Shimizu et al., "Surface Morphology of GaN Films Grown by RF-Plasma MBE Using Lateral Overgrowth and Low-Temperature Ga-rich Condition", Materials Science Forum, Vols. 527-529, pp. 1493-1496, 2006