The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates

Z. Gu; J.H. Edgar; Balaji Raghothamachar; Michael Dudley; Dejin Zhuang; Zlatko Sitar

doi:10.4028/www.scientific.net/MSF.527-529.1497

Paper Titles

The Limit of SiC Detector Energy Resolution in Ion Spectometry
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Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiC
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Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates
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Surface Morphology of GaN Films Grown by RF-Plasma MBE Using Lateral Overgrowth and Low-Temperature Ga-rich Condition
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The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates
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Growth of AlN and AlN-SiC Solid Solution by Sublimation Method
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Improved Structural Quality and Carrier Decay Times in GaN Epitaxy on SiN and TiN Porous Network Templates
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Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC
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Strain Relaxation in GaN/AlN Films Grown on Vicinal and On-Axis SiC Substrates
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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529The Effect of Aluminum Nitride-Silicon Carbide...

The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates

Abstract:

The benefits of depositing AlN-SiC alloy transition layers on SiC substrates before the seeded growth of bulk AlN crystals were determined. The presence of the AlN-SiC alloy layer helped to suppress the SiC decomposition by providing vapor sources of silicon and carbon. It enabled a higher growth temperature, and hence a higher growth rate. In addition, cracks in the final AlN crystals can be decreased because of the intermediate lattice constants and thermal expansion coefficient of AlN-SiC alloy. AlN-SiC alloys were first grown on off-axis SiC substrates by the sublimation-recondensation method. Then pure AlN crystals were grown upon those. For comparison, AlN crystals were directly grown on SiC substrates under similar conditions. X-ray diffraction (XRD) confirmed the formation of a pure single crystalline AlN layer upon the AlN-SiC alloy on SiC substrate. The presence of an AlN-SiC transition layer effectively inhibited the appearance of cracks in the resultant AlN crystals. X-ray topography (XRT) demonstrated that the thick AlN layer effectively released the strain present.

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Materials Science Forum (Volumes 527-529)

Pages:

1497-1500

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1497

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Online since:

October 2006

Authors:

Z. Gu, J.H. Edgar, Balaji Raghothamachar, Michael Dudley, Dejin Zhuang, Zlatko Sitar

Keywords:

Alloy, Aluminum Nitride (AlN), Buffer, Sublimation

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