The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates

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The benefits of depositing AlN-SiC alloy transition layers on SiC substrates before the seeded growth of bulk AlN crystals were determined. The presence of the AlN-SiC alloy layer helped to suppress the SiC decomposition by providing vapor sources of silicon and carbon. It enabled a higher growth temperature, and hence a higher growth rate. In addition, cracks in the final AlN crystals can be decreased because of the intermediate lattice constants and thermal expansion coefficient of AlN-SiC alloy. AlN-SiC alloys were first grown on off-axis SiC substrates by the sublimation-recondensation method. Then pure AlN crystals were grown upon those. For comparison, AlN crystals were directly grown on SiC substrates under similar conditions. X-ray diffraction (XRD) confirmed the formation of a pure single crystalline AlN layer upon the AlN-SiC alloy on SiC substrate. The presence of an AlN-SiC transition layer effectively inhibited the appearance of cracks in the resultant AlN crystals. X-ray topography (XRT) demonstrated that the thick AlN layer effectively released the strain present.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1497-1500

Citation:

Z. Gu et al., "The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates ", Materials Science Forum, Vols. 527-529, pp. 1497-1500, 2006

Online since:

October 2006

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$38.00

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