Improved Structural Quality and Carrier Decay Times in GaN Epitaxy on SiN and TiN Porous Network Templates

Ümit Özgür; Y. Fu; Cole W. Litton; Y.T. Moon; F. Yun; H.O. Everitt; Hadis Morkoç

doi:10.4028/www.scientific.net/MSF.527-529.1505

Paper Titles

Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates
p.1489

Surface Morphology of GaN Films Grown by RF-Plasma MBE Using Lateral Overgrowth and Low-Temperature Ga-rich Condition
p.1493

The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates
p.1497

Growth of AlN and AlN-SiC Solid Solution by Sublimation Method
p.1501

Improved Structural Quality and Carrier Decay Times in GaN Epitaxy on SiN and TiN Porous Network Templates
p.1505

Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC
p.1509

Strain Relaxation in GaN/AlN Films Grown on Vicinal and On-Axis SiC Substrates
p.1513

Anisotropic Properties of GaN Studied by Raman Scattering
p.1517

Structural Characterization of Bulk AlN Single Crystals Grown from Self-Seeding and Seeding by SiC Substrates
p.1521

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Improved Structural Quality and Carrier Decay...

Improved Structural Quality and Carrier Decay Times in GaN Epitaxy on SiN and TiN Porous Network Templates

Abstract:

Improved structural quality and radiative efficiency were observed in GaN thin films grown by metalorganic chemical vapor deposition on in situ-formed SiN and TiN porous network templates. The room temperature carrier decay time of 1.86 ns measured for a TiN network sample is slightly longer than that for a 200 μm-thick high quality freestanding GaN (1.73 ns). The linewidth of the asymmetric X-Ray diffraction (XRD) (1012) peak decreases considerably with the use of SiN and TiN layers, indicating the reduction in threading dislocation density. However, no direct correlation is yet found between the decay times and the XRD linewidths, suggesting that point defect and impurity related nonradiative centers are the main parameters affecting the lifetime.