Structural Characterization of Bulk AlN Single Crystals Grown from Self-Seeding and Seeding by SiC Substrates

Balaji Raghothamachar; Rafael Dalmau; Michael Dudley; Raoul Schlesser; Dejin Zhuang; Ziad Herro; Zlatko Sitar

doi:10.4028/www.scientific.net/MSF.527-529.1521

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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Structural Characterization of Bulk AlN Single...

Structural Characterization of Bulk AlN Single Crystals Grown from Self-Seeding and Seeding by SiC Substrates

Abstract:

Using a combination of synchrotron white beam x-ray topography (SWBXT) and high resolution x-ray diffraction (HRXRD), the structural quality of AlN crystals grown by various sublimation-based techniques have been non-destructively analyzed. Spontaneously nucleated AlN crystals are characterized by very low defect densities but their size is small. Self-seeding results in nucleation of multiple grains of different orientations, a few of which are of good quality while most are highly strained. Using readily available commercial 4H and 6H-SiC substrates, several growth runs have been carried out using different growth conditions to obtain thick AlN layers, either attached to the seed or free-standing. While attached layers are typically cracked and highly strained, crack-free free-standing layers can be obtained by delamination or SiC decomposition. X-ray characterization reveals these crystals have good purity but moderately high defect densities.

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Materials Science Forum (Volumes 527-529)

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1521-1524

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1521

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October 2006

Authors:

Balaji Raghothamachar, Rafael Dalmau, Michael Dudley, Raoul Schlesser, Dejin Zhuang, Ziad Herro, Zlatko Sitar

Keywords:

Aluminum Nitride (AlN), Defect, High Resolution X-Ray Diffraction (HR-XRD), Single Crystal Growth, X-Ray Topography

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