Structural Characterization of Bulk AlN Single Crystals Grown from Self-Seeding and Seeding by SiC Substrates

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Using a combination of synchrotron white beam x-ray topography (SWBXT) and high resolution x-ray diffraction (HRXRD), the structural quality of AlN crystals grown by various sublimation-based techniques have been non-destructively analyzed. Spontaneously nucleated AlN crystals are characterized by very low defect densities but their size is small. Self-seeding results in nucleation of multiple grains of different orientations, a few of which are of good quality while most are highly strained. Using readily available commercial 4H and 6H-SiC substrates, several growth runs have been carried out using different growth conditions to obtain thick AlN layers, either attached to the seed or free-standing. While attached layers are typically cracked and highly strained, crack-free free-standing layers can be obtained by delamination or SiC decomposition. X-ray characterization reveals these crystals have good purity but moderately high defect densities.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1521-1524

Citation:

B. Raghothamachar et al., "Structural Characterization of Bulk AlN Single Crystals Grown from Self-Seeding and Seeding by SiC Substrates", Materials Science Forum, Vols. 527-529, pp. 1521-1524, 2006

Online since:

October 2006

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$38.00

[1] B. Raghothamachar, M. Dudley, J.C. Rojo, K. Morgan and L.J. Schowalter: J. Cryst. Growth Vol. 250 (2003), p.244.

[2] L.J. Schowalter, G.A. Slack, J.B. Whitlock, K. Morgan, S.B. Schujman, B. Raghothamachar, M. Dudley and K.R. Evans: IPAP Conf. Ser. Vol. 4 (Proceedings of 21st Century COE Joint International Workshop on Bulk Nitrides, 2003) (2004), p.38.

[3] B. Raghothamachar, W.M. Vetter, M. Dudley, R. Dalmau, R. Schlesser, Z. Sitar, E. Michaels and J.W. Kolis: J. Crystal Growth Vol. 246(3-4), (2002), p.271.

DOI: https://doi.org/10.1016/s0022-0248(02)01751-7

[4] R. Schlesser, R. Dalmau and Z. Sitar: J. Cryst. Growth Vol. 241 (2002), p.416.

[5] N.B. Singh, A. Berghmans, H. Zhang, T. Wait, R.C. Clarke, J. Zingaro and J.C. Golombeck: J. Crystal Growth, Vol. 250 (2003), p.107.

DOI: https://doi.org/10.1016/s0022-0248(02)02235-2

[6] J. H. Edgar, L. Liu, B. Liu, D. Zhuang, J. Chaudhuri, M. Kuball and S. Rajasingham: J. Crystal Growth Vol. 246 (2002), p.187.

[7] B.M. Epelbaum, M. Bickermann and A. Winnacker: Mater. Sci. Forum, Vols. 433-436 (2003), p.983.

[8] M. Dudley and X.R. Huang, in: Encyclopedia of Materials: Science and Technology, eds. K.H.J. Buschow, R.W. Cahn, M.C. Flemings, B. Ilschner, E.J. Kramer and S. Mahajan (Elsevier Science, New York, 2001) pp.9813-9825.

[9] M. Dudley and X.R. Huang, in: Encyclopedia of Materials: Science and Technology, eds. K.H.J. Buschow, R.W. Cahn, M.C. Flemings, B. Ilschner, E.J. Kramer and S. Mahajan (Elsevier Science, New York, 2001) pp.2775-2786.

[10] V. Noveski, R. Schlesser, B. Raghothamachar, M. Dudley, S. Mahajan, S. Beaudoin and Z. Sitar: J. Cryst. Growth Vol. 279, (2005), p.13.

[11] R. Dalmau, B. Raghothamachar, M. Dudley, R. Schlesser and Z. Sitar: Mater. Res. Soc. Symp. Proc. Vol. 798 (GaN and Related Alloys - 2003) (2004), p.287.

DOI: https://doi.org/10.1557/proc-798-y2.9

[12] R. Dalmau, R. Schlesser, B.J. Rodriguez, R.J. Nemanich and Z. Sitar: J. Crystal Growth Vol. 281 (2005), p.68.