Paper Title:
Structural Characterization of Bulk AlN Single Crystals Grown from Self-Seeding and Seeding by SiC Substrates
  Abstract

Using a combination of synchrotron white beam x-ray topography (SWBXT) and high resolution x-ray diffraction (HRXRD), the structural quality of AlN crystals grown by various sublimation-based techniques have been non-destructively analyzed. Spontaneously nucleated AlN crystals are characterized by very low defect densities but their size is small. Self-seeding results in nucleation of multiple grains of different orientations, a few of which are of good quality while most are highly strained. Using readily available commercial 4H and 6H-SiC substrates, several growth runs have been carried out using different growth conditions to obtain thick AlN layers, either attached to the seed or free-standing. While attached layers are typically cracked and highly strained, crack-free free-standing layers can be obtained by delamination or SiC decomposition. X-ray characterization reveals these crystals have good purity but moderately high defect densities.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1521-1524
DOI
10.4028/www.scientific.net/MSF.527-529.1521
Citation
B. Raghothamachar, R. Dalmau, M. Dudley, R. Schlesser, D. Zhuang, Z. Herro, Z. Sitar, "Structural Characterization of Bulk AlN Single Crystals Grown from Self-Seeding and Seeding by SiC Substrates", Materials Science Forum, Vols. 527-529, pp. 1521-1524, 2006
Online since
October 2006
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