Asymmetric Interface Densities on n and p Type GaN MOS Capacitors

Abstract:

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Both n-type and p-type GaN MOS capacitors with plasma-enhanced CVD-SiO2 as the gate oxide were characterized using both capacitance and conductance techniques. From a n type MOS capacitor, an interface state density of 3.8×1010/cm2-eV was estimated at 0.19eV near the conduction band and decreases deeper into the bandgap while from a p type MOS capacitor, an interface state density of 1.4×1011/cm2-eV 0.61eV above the valence band was estimated and decreases deeper into the bandgap. Unlike the symmetric interface state density distribution in Si, an asymmetric interface state density distribution with lower density near the conduction band and higher density near the valence band has been determined.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1525-1528

DOI:

10.4028/www.scientific.net/MSF.527-529.1525

Citation:

W. Huang et al., "Asymmetric Interface Densities on n and p Type GaN MOS Capacitors", Materials Science Forum, Vols. 527-529, pp. 1525-1528, 2006

Online since:

October 2006

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Price:

$35.00

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