Asymmetric Interface Densities on n and p Type GaN MOS Capacitors

W. Huang; T. Khan; T. Paul Chow

doi:10.4028/www.scientific.net/MSF.527-529.1525

Paper Titles

Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC
p.1509

Strain Relaxation in GaN/AlN Films Grown on Vicinal and On-Axis SiC Substrates
p.1513

Anisotropic Properties of GaN Studied by Raman Scattering
p.1517

Structural Characterization of Bulk AlN Single Crystals Grown from Self-Seeding and Seeding by SiC Substrates
p.1521

Asymmetric Interface Densities on n and p Type GaN MOS Capacitors
p.1525

Effects of Rapid Thermal Annealing Treatment on the Surface Band Bending of n-type GaN Studied by Surface Potential Electric Force Microscopy
p.1529

Quantitative Mobility Spectrum Analysis of AlGaN/GaN Heterostructures Using Variable-Field Hall Measurements
p.1533

Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures
p.1537

Structural Properties and Electrical Characteristics of Homoepitaxial GaN PiN Diodes
p.1541

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Asymmetric Interface Densities on n and p Type GaN...

Asymmetric Interface Densities on n and p Type GaN MOS Capacitors

Abstract:

Both n-type and p-type GaN MOS capacitors with plasma-enhanced CVD-SiO2 as the gate oxide were characterized using both capacitance and conductance techniques. From a n type MOS capacitor, an interface state density of 3.8×1010/cm2-eV was estimated at 0.19eV near the conduction band and decreases deeper into the bandgap while from a p type MOS capacitor, an interface state density of 1.4×1011/cm2-eV 0.61eV above the valence band was estimated and decreases deeper into the bandgap. Unlike the symmetric interface state density distribution in Si, an asymmetric interface state density distribution with lower density near the conduction band and higher density near the valence band has been determined.