Hydrogen-Induced Blistering of SiC: The Role of Post-Implant Multi-Step Annealing Sequences
Hydrogen-exfoliation has become a viable approach to transfer SiC thin layers onto different substrate materials. However, little attention has been paid to the exfoliation-inducing annealing conditions. To investigate the annealing conditions, 4H SiC wafers were implanted with either 2.5×1016 H2 + cm-2 or 5.0×1016 cm-2at 37 KeV. Post-implant, multi-step annealing sequences were examined in order to promote more efficient blistering, and it was found that a low temperature initial annealing step (T ≈ 500°C) can decrease the annealing time necessary in the high temperature regime; this was attributed to a nucleation of hydrogen induced platelet defects during the low temperature annealing regime and efficient splitting during a higher temperature (900 °C) anneal. This process is similar to what is observed for InP and Si exfoliation, except that the annealing processes occur at higher temperature.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
G. Malouf et al., "Hydrogen-Induced Blistering of SiC: The Role of Post-Implant Multi-Step Annealing Sequences", Materials Science Forum, Vols. 527-529, pp. 855-858, 2006