Hydrogen-Induced Blistering of SiC: The Role of Post-Implant Multi-Step Annealing Sequences

G. Malouf; B. Poust; S. Hayashi; G. Yoshizawa; M.S. Goorsky

doi:10.4028/www.scientific.net/MSF.527-529.855

Paper Titles

Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD
p.839

Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes
p.843

Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence
p.847

High Dose High Temperature Ion Implantation of Ge into 4H-SiC
p.851

Hydrogen-Induced Blistering of SiC: The Role of Post-Implant Multi-Step Annealing Sequences
p.855

An Approach to Improving the Morphology and Reliability of n-SiC Ohmic Contacts to SiC Using Second-Metal Contacts
p.859

Ni Graphite Intercalated Compounds in Ohmic Contact Formation on SiC
p.863

Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation
p.867

Structural Properties of Titanium-Nickel Films on Silicon Carbide Following High Temperature Annealing
p.871

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Hydrogen-Induced Blistering of SiC: The Role of...

Hydrogen-Induced Blistering of SiC: The Role of Post-Implant Multi-Step Annealing Sequences

Abstract:

Hydrogen-exfoliation has become a viable approach to transfer SiC thin layers onto different substrate materials. However, little attention has been paid to the exfoliation-inducing annealing conditions. To investigate the annealing conditions, 4H SiC wafers were implanted with either 2.5×1016 H2 + cm-2 or 5.0×1016 cm-2at 37 KeV. Post-implant, multi-step annealing sequences were examined in order to promote more efficient blistering, and it was found that a low temperature initial annealing step (T ≈ 500°C) can decrease the annealing time necessary in the high temperature regime; this was attributed to a nucleation of hydrogen induced platelet defects during the low temperature annealing regime and efficient splitting during a higher temperature (900 °C) anneal. This process is similar to what is observed for InP and Si exfoliation, except that the annealing processes occur at higher temperature.