High Dose High Temperature Ion Implantation of Ge into 4H-SiC

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A box like Ge distribution was formed by ion implantation at 600°C. The Ge concentration was varied from 1 to 20 %. The TEM investigations revealed an increasing damage formation with increasing implantation dose. No polytype inclusions were observed in the implanted regions. A detailed analysis showed different types of lattice distortion identified as insertion stacking faults. The lattice site location analysis by “atomic location by channelling enhanced microanalysis” revealed that the implanted Ge is mainly located at interstitial positions.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

851-854

Citation:

T. Kups et al., "High Dose High Temperature Ion Implantation of Ge into 4H-SiC", Materials Science Forum, Vols. 527-529, pp. 851-854, 2006

Online since:

October 2006

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$38.00

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[2] 8 1st measurement 2nd measurement 3rd measurement Relative Ge peak intensity kxy in units of g0004 Fig. 5: Excitation amplitude of the Bloch states as a function of the reciprocal lattice vector in units of g0004 for the carried out measurements for 1% Ge (a) and 20% Ge (b). (a) (b).