High Dose High Temperature Ion Implantation of Ge into 4H-SiC

Thomas Kups; Petia Weih; M. Voelskow; Wolfgang Skorupa; Joerg Pezoldt

doi:10.4028/www.scientific.net/MSF.527-529.851

Paper Titles

Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing
p.835

Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD
p.839

Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes
p.843

Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence
p.847

High Dose High Temperature Ion Implantation of Ge into 4H-SiC
p.851

Hydrogen-Induced Blistering of SiC: The Role of Post-Implant Multi-Step Annealing Sequences
p.855

An Approach to Improving the Morphology and Reliability of n-SiC Ohmic Contacts to SiC Using Second-Metal Contacts
p.859

Ni Graphite Intercalated Compounds in Ohmic Contact Formation on SiC
p.863

Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation
p.867

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529High Dose High Temperature Ion Implantation of Ge...

High Dose High Temperature Ion Implantation of Ge into 4H-SiC

Abstract:

A box like Ge distribution was formed by ion implantation at 600°C. The Ge concentration was varied from 1 to 20 %. The TEM investigations revealed an increasing damage formation with increasing implantation dose. No polytype inclusions were observed in the implanted regions. A detailed analysis showed different types of lattice distortion identified as insertion stacking faults. The lattice site location analysis by “atomic location by channelling enhanced microanalysis” revealed that the implanted Ge is mainly located at interstitial positions.

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Silicon Carbide and Related Materials 2005

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

851-854

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.851

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Online since:

October 2006

Authors:

Thomas Kups, Petia Weih, M. Voelskow, Wolfgang Skorupa, Joerg Pezoldt

Keywords:

4H-SiC, Ge, Ion Implantation, Solid Solution, TEM

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References

[1] M.W. Dashiell, G. Xuan, E. Ansorge, X. Zhang, J. Kolodzey, G.C. DeSalvo, J.R. Gigante, W.J. Malkowski, R.C. Clarke, J. Liu and M. Skowronski: Appl. Phys. Lett. Vol. 85 (2004), p.2253.