High Dose High Temperature Ion Implantation of Ge into 4H-SiC
A box like Ge distribution was formed by ion implantation at 600°C. The Ge concentration was varied from 1 to 20 %. The TEM investigations revealed an increasing damage formation with increasing implantation dose. No polytype inclusions were observed in the implanted regions. A detailed analysis showed different types of lattice distortion identified as insertion stacking faults. The lattice site location analysis by “atomic location by channelling enhanced microanalysis” revealed that the implanted Ge is mainly located at interstitial positions.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
T. Kups et al., "High Dose High Temperature Ion Implantation of Ge into 4H-SiC", Materials Science Forum, Vols. 527-529, pp. 851-854, 2006