The Mechanism of Interface State Passivation by NO

Peter Deák; T. Hornos; Christoph Thill; Jan Knaup; Adam Gali; Thomas Frauenheim

doi:10.4028/www.scientific.net/MSF.556-557.541

Paper Titles

Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy
p.525

Nanowire Reconstruction on the 4H-SiC(1102) Surface
p.529

Structure of the 3C-SiC(100) 5x2 Surface Reconstruction Investigated by Synchrotron Radiation Based Grazing Incidence X-Ray Diffraction
p.533

The Al₂O₃/4H-SiC Interface Investigated by Thermal Dielectric Relaxation Current Technique
p.537

The Mechanism of Interface State Passivation by NO
p.541

Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy
p.545

XPS Study of the Electronic Properties of the Ce/4H-SiC Interface, and the Formation of the SiO₂/Ce₂Si₂O₇/4H-SiC Interface Structure upon Oxidation
p.549

Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum
p.555

Post-Implantation Annealing of SiC: Relevance of the Heating Rate
p.561

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557The Mechanism of Interface State Passivation by NO

The Mechanism of Interface State Passivation by NO

Abstract:

Preliminary results of a systematic theoretical study on the reactions of NO with a model 4H-SiC/SiO2 interface are presented. We show, that nitridation is a complex process, in which the balance between various mechanisms depends on doping and temperature. For weakly doped (1015-16 cm-3) n-type SiC, the crucial effect is an additional oxidation without creation of excess carbon at the interface.