The Mechanism of Interface State Passivation by NO
Preliminary results of a systematic theoretical study on the reactions of NO with a model 4H-SiC/SiO2 interface are presented. We show, that nitridation is a complex process, in which the balance between various mechanisms depends on doping and temperature. For weakly doped (1015-16 cm-3) n-type SiC, the crucial effect is an additional oxidation without creation of excess carbon at the interface.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
P. Deák et al., "The Mechanism of Interface State Passivation by NO", Materials Science Forum, Vols. 556-557, pp. 541-544, 2007