The Mechanism of Interface State Passivation by NO

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Preliminary results of a systematic theoretical study on the reactions of NO with a model 4H-SiC/SiO2 interface are presented. We show, that nitridation is a complex process, in which the balance between various mechanisms depends on doping and temperature. For weakly doped (1015-16 cm-3) n-type SiC, the crucial effect is an additional oxidation without creation of excess carbon at the interface.

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Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

541-544

Citation:

P. Deák et al., "The Mechanism of Interface State Passivation by NO", Materials Science Forum, Vols. 556-557, pp. 541-544, 2007

Online since:

September 2007

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$38.00

[1] V. V. Afanas'ev et al.: Phys. Stat. Sol (a) Vol. 162 (1997), p.321.

[2] H. F. Li et al.: Appl. Phys. Lett. Vol. 70 (1997), p. (2028).

[3] G. Y. Chung et al.: Appl. Phys. Lett. Vol. 76 (2000), p.1713.

[4] V. V. Afanas'ev et al.: Appl. Phys. Lett. Vol. 82 (2003), p.568.

[5] J.M. Knaup et al.: Phys. Rev. B Vol. 71 (2005), p.235321.

[6] J.M. Knaup et al.: Phys. Rev. B Vol. 72 (2005), p.115323.

[7] H. Yano et al.: Mater. Sci. Forum. Vol. 457-460 (2004), p.1333.

[8] F. Ciobanu et al.: Mater. Sci. Forum. Vol. 483-485 (2004), p.693.

[9] H. -F. Li, S. Dimitrijev et al.: J. Appl. Phys. Vol. 86 (1999), p.4316.