The Mechanism of Interface State Passivation by NO

Abstract:

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Preliminary results of a systematic theoretical study on the reactions of NO with a model 4H-SiC/SiO2 interface are presented. We show, that nitridation is a complex process, in which the balance between various mechanisms depends on doping and temperature. For weakly doped (1015-16 cm-3) n-type SiC, the crucial effect is an additional oxidation without creation of excess carbon at the interface.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

541-544

DOI:

10.4028/www.scientific.net/MSF.556-557.541

Citation:

P. Deák et al., "The Mechanism of Interface State Passivation by NO", Materials Science Forum, Vols. 556-557, pp. 541-544, 2007

Online since:

September 2007

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Price:

$35.00

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