A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process

Abstract:

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A series of designed experiments have been conducted over a period of years in a multiwafer, planetary rotation, epitaxial reactor to quantify the effects of various epitaxial growth process parameters on the resulting SiC epitaxial layers. This paper summarizes the results obtained through statistically designed experiments varying process parameters and their resultant effect on the layer thickness, carrier concentration and the variability of these parameters wafer-to-wafer, and within a wafer.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

57-60

DOI:

10.4028/www.scientific.net/MSF.556-557.57

Citation:

J. D. Oliver and B. H. Ponczak, "A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process", Materials Science Forum, Vols. 556-557, pp. 57-60, 2007

Online since:

September 2007

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Price:

$35.00

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