A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process

James D. Oliver; Brian H. Ponczak

doi:10.4028/www.scientific.net/MSF.556-557.57

Paper Titles

Growth and Electrical Characterization of 4H-SiC Epilayers
p.35

Growth of SiC from a Liquid Phase at Low Temperature
p.41

Thick Epilayer for Power Devices
p.47

4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate
p.53

A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process
p.57

Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling
p.61

Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers
p.65

Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates
p.69

CVD of 6H-SiC on Non-Basal Quasi Polar Faces
p.73

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557A Designed Experiment Approach to Improvement and...

A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process

Abstract:

A series of designed experiments have been conducted over a period of years in a multiwafer, planetary rotation, epitaxial reactor to quantify the effects of various epitaxial growth process parameters on the resulting SiC epitaxial layers. This paper summarizes the results obtained through statistically designed experiments varying process parameters and their resultant effect on the layer thickness, carrier concentration and the variability of these parameters wafer-to-wafer, and within a wafer.