For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
A Comparative Study of Surface Passivation on SiC BJTs with High Current Gain
p.631
Acceleration Factors in Acceleration Life Test of Thermal Oxides on 4H-SiC Wafers
p.635
Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose
p.639
Electrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001)
p.643
Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNy
p.647
Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation
p.651
Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application
p.655
Interface Properties of SiO2/4H-SiC(0001) with Large Off-Angles Formed by N2O Oxidation
p.659
Modification of SiO2/4H-SiC Interface Properties by High-Pressure H2O Vapor Annealing
p.663

Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNy

Article Preview

Abstract:

We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with ultra thin (5 nm) remote-PECVD SixNy dielectric layers and investigated electrical properties of nitrided SiO2/4H-SiC interface after oxidizing the SixNy in dry oxygen at 1150 °C for 30, 60, 90 min. Improvements of electrical properties have been revealed in capacitance-voltage (C-V) and current density-electrical field (J-E) measurements in comparison with dry oxide. The improvements of SiC MOS capacitors formed by oxidizing the pre-deposited SixNy have been explained in this paper.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2006 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

647-650

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.647

Citation:

Cite this paper

Online since:

September 2007

Authors:

Jeong Hyun Moon, Dong Hwan Kim, Ho Keun Song, Jeong Hyuk Yim, Wook Bahng, Nam Kyun Kim, Kwang Seok Seo, Hyeong Joon Kim

Keywords:

4H-SiC, Remote-Plasma Enhanced CVD (R-PECVD), Thermal Nitrided SiO2, Ultra Thin SixNy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2007 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] J. A. Cooper, Jr., M. R. Melloch, J. M. Woodall, J. Spitz, K. J. Schoen and J. P. Henning: III-Nitrides and Related Materials, eds. G. Pensil, H. Morkoç, B. Monemar and E. Janzěn. (Trans Tech Publications Ltd, Switzerland·Germany·UK·USA, 1998), p.895.

Google Scholar

[2] K. Hara, III-Nitrides and Related Materials, eds. G. Pensil, H. Morkoç, B. Monemar and E. Janzěn: (Trans Tech Publications Ltd, Switzerland·Germany·UK·USA, 1998), p.901.

Google Scholar

[3] C. E. Weitzel: III-Nitrides and Related Materials, eds. G. Pensil, H. Morkoç, B. Monemar and E. Janzěn: (Trans Tech Publications Ltd, Switzerland·Germany·UK·USA, 1998), p.907.

Google Scholar

[4] V. V. Afanas'ev, M. Bassler, G. Pensl, and M. Schulz: Phys. Stat. sol(a). Vol. 162 (1992), p.321.

Google Scholar

[5] V. V Afanas'ev, A. Stesmans, M. Bassler, G. Pensl, M. J. Schulz, and C. I. Harris: Appl. Phys. Lett. Vol. 68 (1996) p.2141.

Google Scholar

[6] P. Jamet, S. Dimitrijev, and P. Tanner: J. Appl. Phys. Vol. 90 (2001) p.5058.

Google Scholar

[7] K.Y. Cheong et al: Microelectro. Eng. Vol. 83 (2006), p.65.

Google Scholar

[8] D. Gilmore et al: J. Appl. Phys Vol. 95 (2004) p.365.

Google Scholar

[9] K. Y. Cheong, W. Bahng, and N. K. Kim: Mater. Sci. Forum. Vol. 483~ 485 (2005), p.689.

Google Scholar

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.