Modification of SiO2/4H-SiC Interface Properties by High-Pressure H2O Vapor Annealing

D. Takeda; Hiroshi Yano; Tomoaki Hatayama; Yukiharu Uraoka; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.556-557.663

Paper Titles

Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited Si_xN_y
p.647

Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation
p.651

Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application
p.655

Interface Properties of SiO₂/4H-SiC(0001) with Large Off-Angles Formed by N₂O Oxidation
p.659

Modification of SiO₂/4H-SiC Interface Properties by High-Pressure H₂O Vapor Annealing
p.663

Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices
p.667

Study of Polyimide Films as Passivation for High Temperature High Voltage Silicon Carbide Devices
p.671

Time-Dependent Dielectric Breakdown of Thermal Oxides on 4H-SiC
p.675

Trap Assisted Conduction in High K Dielectric Capacitors on 4H-SiC
p.679

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Modification of SiO2/4H-SiC Interface Properties...

Modification of SiO₂/4H-SiC Interface Properties by High-Pressure H₂O Vapor Annealing

Abstract:

We performed high-pressure H2O vapor annealing on 4H-SiC n-MOS capacitors to control SiO2/4H-SiC interface properties. High-pressure H2O annealing was performed at 270～ 420oC at a pressure of 1.31～1.67MPa. Effective negative fixed oxide charge decreased with increasing anneal temperature in the case annealed with Al gate electrodes. However, it increased with increasing anneal temperature in the case annealed without Al gate electrodes. The effect of annealing was much larger on the C-face than that of Si-face. Interface state densities near the conduction band edge was decreased at 420oC under 1.67MPa compared to other samples, especially on the C-face n-MOS capacitors.