Interface Properties of SiO2/4H-SiC(0001) with Large Off-Angles Formed by N2O Oxidation

Abstract:

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In this study, we have investigated N2O oxidation of various off-angled 4H-SiC (0001) epilayers and characterized the properties of MOS interfaces. The oxide thickness almost linearly increases with increasing off-angle. Oxidation on highly off-angled (0001) 4H-SiC is faster than that on 8o off-axis (0001). The off-angle dependence of Dit is very small for the MOS capacitors in the off-angle range from 8o to 30o. The depth profiles of carbon and nitrogen atoms near the MOS interface on 15o off-axis 4H-SiC(0001) are similar to those on 8o off-axis (0001).

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

659-662

DOI:

10.4028/www.scientific.net/MSF.556-557.659

Citation:

H. Saitoh et al., "Interface Properties of SiO2/4H-SiC(0001) with Large Off-Angles Formed by N2O Oxidation", Materials Science Forum, Vols. 556-557, pp. 659-662, 2007

Online since:

September 2007

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Price:

$35.00

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