Interface Properties of SiO2/4H-SiC(0001) with Large Off-Angles Formed by N2O Oxidation

Hiroaki Saitoh; Akinori Seki; Akira Manabe; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.556-557.659

Paper Titles

Electrical Properties of Atomic-Layer-Deposited La₂O₃/Thermal-Nitrided SiO₂ Stacking Dielectric on 4H-SiC(0001)
p.643

Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited Si_xN_y
p.647

Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation
p.651

Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application
p.655

Interface Properties of SiO₂/4H-SiC(0001) with Large Off-Angles Formed by N₂O Oxidation
p.659

Modification of SiO₂/4H-SiC Interface Properties by High-Pressure H₂O Vapor Annealing
p.663

Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices
p.667

Study of Polyimide Films as Passivation for High Temperature High Voltage Silicon Carbide Devices
p.671

Time-Dependent Dielectric Breakdown of Thermal Oxides on 4H-SiC
p.675

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Interface Properties of SiO2/4H-SiC(0001) with...

Interface Properties of SiO₂/4H-SiC(0001) with Large Off-Angles Formed by N₂O Oxidation

Abstract:

In this study, we have investigated N2O oxidation of various off-angled 4H-SiC (0001) epilayers and characterized the properties of MOS interfaces. The oxide thickness almost linearly increases with increasing off-angle. Oxidation on highly off-angled (0001) 4H-SiC is faster than that on 8o off-axis (0001). The off-angle dependence of Dit is very small for the MOS capacitors in the off-angle range from 8o to 30o. The depth profiles of carbon and nitrogen atoms near the MOS interface on 15o off-axis 4H-SiC(0001) are similar to those on 8o off-axis (0001).