SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 °C

Philip G. Neudeck; David J. Spry; Liang Yu Chen; Robert S. Okojie; Glenn M. Beheim; Roger D. Meredith; Terry L. Ferrier

doi:10.4028/www.scientific.net/MSF.556-557.831

Paper Titles

Lateral 4H-SiC MOSFETs with Low On-Resistance by Using Two-Zone Double RESURF Structure
p.815

Low Output Capacitance 1500V 4H-SiC MOSFETs with 8 mΩ·cm² Specific On-Resistance
p.819

Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations
p.823

Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body
p.827

SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 °C
p.831

SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps
p.835

Simulation Study of High-k Materials for SiC Trench MOSFETs
p.839

Temperature Stability of Heteropolytypic 6H/3C FETs
p.843

Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs
p.847

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SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 °C

Abstract:

While there have been numerous reports of short-term transistor operation at 500 °C or above, these devices have previously not demonstrated sufficient long-term operational durability at 500 °C to be considered viable for most envisioned applications. This paper reports the development of SiC field effect transistors capable of long-term electrical operation at 500 °C. A 6H-SiC MESFET was packaged and subjected to continuous electrical operation while residing in a 500 °C oven in oxidizing air atmosphere for over 2400 hours. The transistor gain, saturation current (IDSS), and on-resistance (RDS) changed by less than 20% from initial values throughout the duration of the biased 500 °C test. Another high-temperature packaged 6H-SiC MESFET was employed to form a simple one-stage high-temperature low-frequency voltage amplifier. This single-stage common-source amplifier demonstrated stable continuous electrical operation (negligible changes to gain and operating biases) for over 600 hours while residing in a 500 °C air ambient oven. In both cases, increased leakage from annealing of the Schottky gate-to-channel diode was the dominant transistor degradation mechanism that limited the duration of 500 °C electrical operation.