SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps

Amador Pérez-Tomás; Michael R. Jennings; Philip  Andrew Mawby; James A. Covington; Philippe Godignon; José Millan; Narcis Mestres

doi:10.4028/www.scientific.net/MSF.556-557.835

Paper Titles

Low Output Capacitance 1500V 4H-SiC MOSFETs with 8 mΩ·cm² Specific On-Resistance
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Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations
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Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body
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SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 °C
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SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps
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Simulation Study of High-k Materials for SiC Trench MOSFETs
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Temperature Stability of Heteropolytypic 6H/3C FETs
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Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs
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Reliability of SiC Power Devices Against Cosmic Radiation-Induced Failure
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HomeMaterials Science ForumMaterials Science Forum Vols. 556-557SiC MOSFET Channel Mobility Dependence on...

SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps

Abstract:

In prior work we have proposed a mobility model for describing the mobility degradation observed in SiC MOSFET devices, suitable for being implemented into a commercial simulator, including Coulomb scattering effects at interface traps. In this paper, the effect of temperature and doping on the channel mobility has been modelled. The computation results suggest that the Coulomb scattering at charged interface traps is the dominant degradation mechanism. Simulations also show that a temperature increase implies an improvement in field-effect mobility since the inversion channel concentration increases and the trapped charge is reduced due to bandgap narrowing. In contrast, increasing the substrate impurity concentration further degrades the fieldeffect mobility since the inversion charge concentration decreases for a given gate bias. We have good agreement between the computational results and experimental mobility measurements.

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Materials Science Forum (Volumes 556-557)

Pages:

835-838

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.835

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Online since:

September 2007

Authors:

Amador Pérez-Tomás, Michael R. Jennings, Philip Andrew Mawby, James A. Covington, Philippe Godignon, José Millan, Narcis Mestres

Keywords:

Channel Mobility, Coulomb Scattering, Doping, Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Temperature

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References

[1] A. Pérez-Tomás, P. Godignon, N. Mestres and J. Millán: Microelec. Eng. Vol. 83 (2006), p.440.

Google Scholar

[2] C. Lombardi, S. Manzini, A. Saporto and M. Vanzi: IEEE Trans. Computer-Aided Des. Vol. 7 (1988), p.1164.

Google Scholar

[3] C. T. Sah, T. H. Ning and L. L. Tschopp: Surface Sci. Vol. 32 (1972), p.561.

Google Scholar

[4] A. Pérez-Tomás, P. Brosselard, P. Godignon, J. Millán, N. Mestres, M. R. Jennings, J. A. Covington and P. A. Mawby: Accepted for publication in J. Appl. Phys.

Google Scholar

[5] E. Arnold and D. Alok: IEEE Trans. Elect. Dev. Vol. 48 (2001), p.1870.

Google Scholar

[6] T. Hatakeyama, T. Watanabe, J. Senzaki, M. Kato, K. Fukuda, T. Shinohe and K. Arai: Mater. Sci. Forum Vol. 483-485 (2005), p.829.

DOI: 10.4028/www.scientific.net/msf.483-485.829

Google Scholar