Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations

In Ho Kang; Wook Bahng; Sang Cheol Kim; Sung Jae Joo; Nam Kyun Kim

doi:10.4028/www.scientific.net/MSF.556-557.823

Paper Titles

Increased Channel Mobility in 4H-SiC UMOSFETs Using On-Axis Substrates
p.807

Investigation of Drain Current Saturation in 4H-SiC MOSFETs
p.811

Lateral 4H-SiC MOSFETs with Low On-Resistance by Using Two-Zone Double RESURF Structure
p.815

Low Output Capacitance 1500V 4H-SiC MOSFETs with 8 mΩ·cm² Specific On-Resistance
p.819

Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations
p.823

Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body
p.827

SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 °C
p.831

SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps
p.835

Simulation Study of High-k Materials for SiC Trench MOSFETs
p.839

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Numerical Investigation of the DC and RF...

Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations

Abstract:

A double delta-doped channel 4H-SiC MESFET is proposed to kick out degradation of the DC and RF performances caused by the surface traps, by forming a quantum-well-like potential well and separating an effective channel from the surface. To obtain an optimum device structure, the DC and RF performances of double delta-doped channel MESFETs having various delta-doping concentrations but the same pinch-off voltage with that of conventional MESFET were also investigated. The SilvacoTM simulation results show that the double delta-doped channel MESFET achieved more improvement of the drain current, the cut-off frequency, and the maximum oscillation frequency for higher delta-doping concentration near the gate. In all cases, DC and RF performances for double delta-doped channel MESFETs are much improved than those of the conventional MESFET.