Increased Channel Mobility in 4H-SiC UMOSFETs Using On-Axis Substrates

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Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

807-810

DOI:

10.4028/www.scientific.net/MSF.556-557.807

Citation:

H. Yano et al., "Increased Channel Mobility in 4H-SiC UMOSFETs Using On-Axis Substrates", Materials Science Forum, Vols. 556-557, pp. 807-810, 2007

Online since:

September 2007

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$38.00

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DOI: 10.4028/www.scientific.net/msf.527-529.1293

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[20] [40] [60] [80] Channel Mobility (cm 2/Vs) Gate Voltage (V) (1120) (1120) (1100) (1100) (a) on-axis sub.

10 20.

[20] [40] [60] [80] Gate Voltage (V) Channel Mobility (cm 2/Vs) (1120) (1120) (1100) (1100) (b) 8 o -off sub Fig. 4: Field-effect channel mobility as a function of gate voltage for UMOSFETs on (a) on-axis and (b) 8 o -off substrates.

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