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HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Increased Channel Mobility in 4H-SiC UMOSFETs...

Increased Channel Mobility in 4H-SiC UMOSFETs Using On-Axis Substrates

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Silicon Carbide and Related Materials 2006

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

807-810

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.807

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Online since:

September 2007

Authors:

Hiroshi Yano, H. Nakao, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki

Keywords:

Channel Mobility, Off-Angle, On-Axis, Trench, UMOSFET

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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[1] B.J. Baliga:Power Semiconductor Devices (PWS Pub, Boston 1996).

[2] Y. Li, J.A. Cooper, Jr. and M.A. Capano: IEEE Trans. Electron Devices Vol. 49 (2002), p.972

[3] Q. Zhang, M. Gomez, C. Bui and E. Hanna: Proc. 17 th International Symposium on Power Semiconductor Devices & IC's (2005), p.211

[4] H. Nakao, H. Mikami, H. Yano, T. Hatayama, Y. Uraoka and T. Fuyuki: Mater. Sci. Forum Vol. 527-529 (2006), pp.1293-80 Channel Mobility (cm 2/Vs) Gate Voltage (V) (1120) (1120) (1100) (1100) (a) on-axis sub 0 10 20 0 20 40 60 80 Gate Voltage (V) Channel Mobility (cm 2/Vs) (1120) (1120) (1100) (1100) (b) 8 o -off sub Fig. 4: Field-effect channel mobility as a function of gate voltage for UMOSFETs on (a) on-axis and (b) 8 o -off substrates.

DOI: 10.4028/www.scientific.net/msf.556-557.807