Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate

S. Katakami; Makoto Ogata; Shuichi Ono; Manabu Arai

doi:10.4028/www.scientific.net/MSF.556-557.803

Paper Titles

Fabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al₂O₃ Gate Insulator
p.787

Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETs
p.791

High Frequency 4H-SiC MOSFETs
p.795

High Temperature Characterisation of 4H-SiC VJFET
p.799

Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate
p.803

Increased Channel Mobility in 4H-SiC UMOSFETs Using On-Axis Substrates
p.807

Investigation of Drain Current Saturation in 4H-SiC MOSFETs
p.811

Lateral 4H-SiC MOSFETs with Low On-Resistance by Using Two-Zone Double RESURF Structure
p.815

Low Output Capacitance 1500V 4H-SiC MOSFETs with 8 mΩ·cm² Specific On-Resistance
p.819

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Improvement of Electrical Characteristics of Ion...

Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate

Abstract:

The electrical characteristics of a SiC-MESFET are affected by the channel structure characteristics, such as impurity density and thickness. MESFETs fabricated with ion implantation technique, can form thinner and higher doped channel layers than those fabricated with conventional epitaxial growth, thus improve RF characteristics of MESFETs. We calculated the doping profile of the channel layer for an ion implanted SiC-MESFET using a simulator and then fabricated a SiC-MESFET with the same doping profile as obtained from the simulation. The ion implanted SiC-MESFET operated successfully and had the same electrical characteristics as the epitaxial SiC-MESFET. We demonstrated the effectiveness of one-step implantation channel layer for the ion implanted SiC-MESFET.