Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body

Keiko Fujihira; Naruhisa Miura; Tomokatsu Watanabe; Yukiyasu Nakao; Naoki Yutani; Kenichi Ohtsuka; Masayuki Imaizumi; Tetsuya Takami; Tatsuo Oomori

doi:10.4028/www.scientific.net/MSF.556-557.827

Paper Titles

Investigation of Drain Current Saturation in 4H-SiC MOSFETs
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Lateral 4H-SiC MOSFETs with Low On-Resistance by Using Two-Zone Double RESURF Structure
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Low Output Capacitance 1500V 4H-SiC MOSFETs with 8 mΩ·cm² Specific On-Resistance
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Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations
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Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body
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SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 °C
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SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps
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Simulation Study of High-k Materials for SiC Trench MOSFETs
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Temperature Stability of Heteropolytypic 6H/3C FETs
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HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Realization of Low On-Resistance 4H-SiC Power...

Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body

Abstract:

Inversion-type 4H-SiC power MOSFETs using p-body implanted with retrograde profiles have been fabricated. The Al concentration at the p-body surface (Nas) is varied in the range from 5×1015 to 2×1018 cm-3. The MOSFETs show normally-off characteristics. While the Ron is 3 cm2 at Eox = (Vg-Vth)/dox ≅ 3 MV/cm for the MOSFET with the Nas of 2×1018 cm-3, the Ron is reduced by a decrease in the Nas and 26 mcm2 is attained for the device with the Nas of 5×1015 cm-3. The inversion channel mobility and threshold voltage are improved with a decrease in the Nas. By modifying the structural parameter of the MOSFET, a still smaller Ron of 7 mcm2 is achieved with a blocking voltage of 1.3 kV.