Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs

Abstract:

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An investigation concerning suitable termination techniques for 4H-SiC trench JFETs is presented. Field plates, p+ floating rings and junction termination extension techniques are used to terminate 1.2kV class PiN diodes. The fabricated PiN diodes evaluated here have a similar design to trench JFETs. Therefore, the conclusions for PiN diodes can be applied to JFET structures as well. Numerical simulations are also used to illustrate the effect of the terminations on the diodes’ blocking mode behaviour.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

925-928

DOI:

10.4028/www.scientific.net/MSF.556-557.925

Citation:

A. Mihaila et al., "Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs", Materials Science Forum, Vols. 556-557, pp. 925-928, 2007

Online since:

September 2007

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Price:

$35.00

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