Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs

Andrej Mihaila; F. Udrea; S.J. Rashid; G. Amaratunga; Mitsuhiro Kataoka; Yuuichi Takeuchi; Rajesh Kumar Malhan

doi:10.4028/www.scientific.net/MSF.556-557.925

Paper Titles

Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes
p.909

Degradation of Charge Collection Efficiency Obtained for 6H-SiC n⁺p Diodes Irradiated with Gold Ions
p.913

Effects of Very High Neutron Fluence Irradiation on p⁺n Junction 4H-SiC Diodes
p.917

Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process
p.921

Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs
p.925

Fabrication of pn-Junction Diode for N⁺ Implanted 4H-SiC(0001) Annealed by EBAS
p.929

Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum
p.933

Potential Benefits of Silicon Carbide Zener Diodes Used as Components of Intrinsically Safe Barriers
p.937

4H-SiC High Temperature Spectrometers
p.941

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Evaluation of Termination Techniques for 4H-SiC...

Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs

Abstract:

An investigation concerning suitable termination techniques for 4H-SiC trench JFETs is presented. Field plates, p+ floating rings and junction termination extension techniques are used to terminate 1.2kV class PiN diodes. The fabricated PiN diodes evaluated here have a similar design to trench JFETs. Therefore, the conclusions for PiN diodes can be applied to JFET structures as well. Numerical simulations are also used to illustrate the effect of the terminations on the diodes’ blocking mode behaviour.