Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process

Pavel A. Ivanov; Michael E. Levinshtein; Mykola S. Boltovets; Valentyn A. Krivutsa; John W. Palmour; Mrinal K. Das; Brett A. Hull

doi:10.4028/www.scientific.net/MSF.556-557.921

Paper Titles

Behaviour of 4H-SiC pin Diodes Studied by Numerical Device Simulation
p.905

Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes
p.909

Degradation of Charge Collection Efficiency Obtained for 6H-SiC n⁺p Diodes Irradiated with Gold Ions
p.913

Effects of Very High Neutron Fluence Irradiation on p⁺n Junction 4H-SiC Diodes
p.917

Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process
p.921

Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs
p.925

Fabrication of pn-Junction Diode for N⁺ Implanted 4H-SiC(0001) Annealed by EBAS
p.929

Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum
p.933

Potential Benefits of Silicon Carbide Zener Diodes Used as Components of Intrinsically Safe Barriers
p.937

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Electrical Characterization of High Voltage 4H-SiC...

Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process

Abstract:

Forward current-voltage (I-V) characteristics and non-equilibrium carrier lifetime, τ were measured in 4H-SiC pin diodes (10-kV rated, 100 μm base width). The τ value was found to be 3.7 μs at room temperature by measurements of open circuit voltage decay. To the best of the authors' knowledge, the above lifetime value is the highest reported for 4H-SiC. The forward voltage drops were measured to be 3.44 V at current density of 100 A/cm2 and 5.45 V at 1000 A/cm2 showing a very deep modulation of the blocking base by injected carriers. Diodes operated well at elevated temperatures up to 400oC. No essential forward degradation was detected after 300- A×min current stress at 400oC.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2006

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

921-924

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.921

Citation:

Cite this paper

Online since:

September 2007

Authors:

Pavel A. Ivanov, Michael E. Levinshtein, Mykola S. Boltovets, Valentyn A. Krivutsa, John W. Palmour, Mrinal K. Das, Brett A. Hull

Keywords:

Forward Voltage Drop, High Voltage Pin Diodes, Minority Carrier Lifetime, Stability

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] J.J. Sumakeris, M.K. Das, H.M. Hobgood, S.G. Mueller, M.J. Paisley, J.W. Palmour, and C.H. Carter, Jr.: Mater. Sci. Forum Vol. 457-460 (2004), p.1113.

DOI: 10.4028/www.scientific.net/msf.457-460.1113

Google Scholar

[2] M.E. Levinshtein, T. T Mnatsakanov, P.A. Ivanov, R. Singh, J. W. Palmour, S.N. Yurkov: Solid State Electron. Vol. 48 (2004), p.807.

DOI: 10.1016/j.sse.2003.11.001

Google Scholar

[3] H. Schlangenotto, W. Gerlach: Solid State Electron. Vol. 15(1972), p.393.

Google Scholar

[4] N.V. Dyakonova, P. A Ivanov, V. A Kozlov, M.E. Levinshtein, J.W. Palmour, S.L. Rumyantsev, R. Singh: IEEE Trans. on Electron Dev. Vol. 46 (1999), p.2188.

DOI: 10.1109/16.796295

Google Scholar