Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes

Aurelie Thuaire; Michel Mermoux; Edwige Bano; Alexandre Crisci; Francis Baillet; Konstantinos Zekentes

doi:10.4028/www.scientific.net/MSF.556-557.909

Paper Titles

Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects
p.889

Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications
p.895

1.2 kV Pin Diodes with SiCrystal Epiwafer
p.901

Behaviour of 4H-SiC pin Diodes Studied by Numerical Device Simulation
p.905

Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes
p.909

Degradation of Charge Collection Efficiency Obtained for 6H-SiC n⁺p Diodes Irradiated with Gold Ions
p.913

Effects of Very High Neutron Fluence Irradiation on p⁺n Junction 4H-SiC Diodes
p.917

Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process
p.921

Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs
p.925

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Coupling between the Raman Spectroscopy and...

Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes

Abstract:

Raman spectroscopy and photoemission microscopy were coupled as two complementary non-destructive optical techniques in order to study biased 4H-SiC pin diodes. These two characterization tools have been largely used for the study of semiconductors but the combination of these two techniques has hardly been reported so far. Some structural defects inducing the same electrical damage could be discriminated and identified. Temperature could be measured in operating devices and the influence of the diode operating mode on the Raman signal could be evidenced.

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Materials Science Forum (Volumes 556-557)

Pages:

909-912

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.909

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Online since:

September 2007

Authors:

Aurelie Thuaire, Michel Mermoux, Edwige Bano, Alexandre Crisci, Francis Baillet, Konstantinos Zekentes

Keywords:

Leakage Current, Photoemission Microscopy, PiN Diode, Raman Spectroscopy, Structural Defects, Temperature Measurement

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References

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