Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes

Abstract:

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Raman spectroscopy and photoemission microscopy were coupled as two complementary non-destructive optical techniques in order to study biased 4H-SiC pin diodes. These two characterization tools have been largely used for the study of semiconductors but the combination of these two techniques has hardly been reported so far. Some structural defects inducing the same electrical damage could be discriminated and identified. Temperature could be measured in operating devices and the influence of the diode operating mode on the Raman signal could be evidenced.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

909-912

DOI:

10.4028/www.scientific.net/MSF.556-557.909

Citation:

A. Thuaire et al., "Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes", Materials Science Forum, Vols. 556-557, pp. 909-912, 2007

Online since:

September 2007

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$35.00

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