Structural Changes in Nickel Silicide Thin Films under the Presence of Al and Ga
Thin Ni/Al and Ni/Ga layers of different atomic ratios were codeposited onto Si(001) at room temperature followed by subsequent annealing. Influence of annealing temperature on morphology and composition of ternary disilicide NiSi2-xAlx and NiSi2-xGax layers was investigated by transmission electron microscopy. Addition of Al or Ga leads to a decrease of the disilicide formation temperature from 700°C down to at least 500°C. Depending on the composition closed, uniformly oriented NiSi2-xAlx and NiSi2-xGax layers were observed after annealing at 900°C, whereas reaction of a pure Ni film with Si leads to the island formation with a mixture of A- and B-type orientations.
T. Chandra, N. Wanderka, W. Reimers , M. Ionescu
A.V. Mogilatenko et al., "Structural Changes in Nickel Silicide Thin Films under the Presence of Al and Ga", Materials Science Forum, Vols. 638-642, pp. 2938-2943, 2010