Structural Changes in Nickel Silicide Thin Films under the Presence of Al and Ga

Abstract:

Thin Ni/Al and Ni/Ga layers of different atomic ratios were codeposited onto Si(001) at room temperature followed by subsequent annealing. Influence of annealing temperature on morphology and composition of ternary disilicide NiSi2-xAlx and NiSi2-xGax layers was investigated by transmission electron microscopy. Addition of Al or Ga leads to a decrease of the disilicide formation temperature from 700°C down to at least 500°C. Depending on the composition closed, uniformly oriented NiSi2-xAlx and NiSi2-xGax layers were observed after annealing at 900°C, whereas reaction of a pure Ni film with Si leads to the island formation with a mixture of A- and B-type orientations.

• Periodical: Materials Science Forum (Volumes 638-642)
• Pages: 2938-2943
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.638-642.2938
• Online since: January 2010
• Authors: A.V. Mogilatenko, Frank Allenstein, M.A. Schubert, Meiken Falke, G. Beddies, Wolfgang Neumann
• Keywords: Aluminum (Al), Gallium, Nickel Silicide, Silicide, Thin Film

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