Silicon Carbide APD with Improved Detection Sensitivity and Stability
This paper describes a novel design to achieve sensitive and stable performance of an avalanche photodiode based on silicon carbide material. The design includes a field-stopping layer with limited extension, and junction termination, in order to achieve avalanche multiplication only in the central region of the device. Also, sensitivity is increased by the achievement of a rectangular field distribution, and full depletion of the absorption region by the onset of avalanche multiplication. Evaluation of devices produced with this design show that a low leakage current and a sharp and stable avalanche breakdown point around 120V is achieved. Optical responsivity to radiation of wavelength 200 to 400 nm is shown to increase with increasing applied reverse bias, until a factor of 8 increase is achieved at the breakdown voltage.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
M. Bakowski et al., "Silicon Carbide APD with Improved Detection Sensitivity and Stability", Materials Science Forum, Vols. 645-648, pp. 1089-1092, 2010