Silicon Carbide APD with Improved Detection Sensitivity and Stability

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This paper describes a novel design to achieve sensitive and stable performance of an avalanche photodiode based on silicon carbide material. The design includes a field-stopping layer with limited extension, and junction termination, in order to achieve avalanche multiplication only in the central region of the device. Also, sensitivity is increased by the achievement of a rectangular field distribution, and full depletion of the absorption region by the onset of avalanche multiplication. Evaluation of devices produced with this design show that a low leakage current and a sharp and stable avalanche breakdown point around 120V is achieved. Optical responsivity to radiation of wavelength 200 to 400 nm is shown to increase with increasing applied reverse bias, until a factor of 8 increase is achieved at the breakdown voltage.

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Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

1089-1092

Citation:

M. Bakowski et al., "Silicon Carbide APD with Improved Detection Sensitivity and Stability", Materials Science Forum, Vols. 645-648, pp. 1089-1092, 2010

Online since:

April 2010

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$38.00

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25 200 220 240 260 280 300 320 340 360 380 400 420 Wavelength (nm) Responsivity (A/W) 0V 20V (16%VBD) 40V (33%VBD) 60V (49%VBD) 80V (66%VBD) 100V (82%VBD) 120V (98. 7%VBD) 120. 5V (99. 1%VBD) 121. 0V (99. 5%VBD) Fig. 5. Measured optical responsivity curves as a function of wavelength and applied reverse voltage for a 2 mm device. (a) linear plot, (b) log plot.

DOI: https://doi.org/10.1149/1.3567602

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[1] 000 200 220 240 260 280 300 320 340 360 380 400 420 Wavelength (nm) Responsivity (A/W).