Silicon Carbide APD with Improved Detection Sensitivity and Stability

Mietek Bakowski; Adolf Schöner; Ingemar Petermann; Susan Savage

doi:10.4028/www.scientific.net/MSF.645-648.1089

Paper Titles

Optical Properties of Antireflective Subwavelength Structures on 4H-SiC for UV Photodetectors
p.1073

Impact Ionization in 4H-SiC Nuclear Radiation Detectors
p.1077

Characterisation of Low Noise 4H-SiC Avalanche Photodiodes
p.1081

Fabrication and Characteristics of Micro Heaters Based on Polycrystalline 3C-SiC for High Temperature and Voltage
p.1085

Silicon Carbide APD with Improved Detection Sensitivity and Stability
p.1089

Silicon Carbide Based Energy Harvesting Module for Hostile Environments
p.1093

New Generation of SiC Based Biodevices Implemented on 4” Wafers
p.1097

SiC vs. Si - Evaluation of Potentials for Performance Improvement of Power Electronics Converter Systems by SiC Power Semiconductors
p.1101

Fully-Integrated 6H-SiC JFET Amplifiers for High-Temperature Sensing
p.1107

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Silicon Carbide APD with Improved Detection...

Silicon Carbide APD with Improved Detection Sensitivity and Stability

Abstract:

This paper describes a novel design to achieve sensitive and stable performance of an avalanche photodiode based on silicon carbide material. The design includes a field-stopping layer with limited extension, and junction termination, in order to achieve avalanche multiplication only in the central region of the device. Also, sensitivity is increased by the achievement of a rectangular field distribution, and full depletion of the absorption region by the onset of avalanche multiplication. Evaluation of devices produced with this design show that a low leakage current and a sharp and stable avalanche breakdown point around 120V is achieved. Optical responsivity to radiation of wavelength 200 to 400 nm is shown to increase with increasing applied reverse bias, until a factor of 8 increase is achieved at the breakdown voltage.