Silicon Carbide APD with Improved Detection Sensitivity and Stability

Abstract:

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This paper describes a novel design to achieve sensitive and stable performance of an avalanche photodiode based on silicon carbide material. The design includes a field-stopping layer with limited extension, and junction termination, in order to achieve avalanche multiplication only in the central region of the device. Also, sensitivity is increased by the achievement of a rectangular field distribution, and full depletion of the absorption region by the onset of avalanche multiplication. Evaluation of devices produced with this design show that a low leakage current and a sharp and stable avalanche breakdown point around 120V is achieved. Optical responsivity to radiation of wavelength 200 to 400 nm is shown to increase with increasing applied reverse bias, until a factor of 8 increase is achieved at the breakdown voltage.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

1089-1092

DOI:

10.4028/www.scientific.net/MSF.645-648.1089

Citation:

M. Bakowski et al., "Silicon Carbide APD with Improved Detection Sensitivity and Stability", Materials Science Forum, Vols. 645-648, pp. 1089-1092, 2010

Online since:

April 2010

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$35.00

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