A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT

Dominique Tournier; Pascal Bevilacqua; Pierre Brosselard; Dominique Planson

doi:10.4028/www.scientific.net/MSF.645-648.1155

Paper Titles

Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures
p.1139

NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications
p.1143

600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration
p.1147

Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFET
p.1151

A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT
p.1155

Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits
p.1159

Mixed Mode Modeling and Characterization of a 4H-SiC Power DMOSFET Based DC-DC Power Converter
p.1163

SiC JFETs for Power Module Applications
p.1167

System Improvements of Photovoltaic Inverters with SiC-Transistors
p.1171

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648A Step Toward High Temperature Intelligent Power...

A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT

Abstract:

Looking back to the development of inverters using SiC switches, it appears that SiC devices do not behave like their silicon counterparts. Their ability to operate at high temperature makes them attractive. Developing drivers suitable for 200 °C operation is not straightforward. In a perspective of high integration and large power density, it is wise to consider a monolithic integration of the driver parts for the sake of reliability. Silicon is not suitable for high ambient temperature; silicon-oninsulator offers better performances and presents industrial perspectives. The paper focuses on a SiC BJT driver: it processes logical orders from outside, drives adequately the BJT to turn it either on or off, monitors the turn-off and turn-on state of the device, and acts accordingly to prevent failure. SiC BJT imposes specific performances different from the well known ones of SiC JFET or MOSFET. The paper addresses a preliminary analysis of a SOI driver, anticipating the behavior of SiC-BJT and the change in behavior at high temperature. A discret driver has been designed and fabricated. Elementary functional blocks have been validated, and a BJT converter successfully operated at high temperature with high efficiency ( = 88%).