Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFET

In Ho Kang; Sung Jae Joo; Wook Bahng; Sang Cheol Kim; Nam Kyun Kim

doi:10.4028/www.scientific.net/MSF.645-648.1151

Paper Titles

Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from -150 °C to +500 °C
p.1135

Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures
p.1139

NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications
p.1143

600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration
p.1147

Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFET
p.1151

A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT
p.1155

Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits
p.1159

Mixed Mode Modeling and Characterization of a 4H-SiC Power DMOSFET Based DC-DC Power Converter
p.1163

SiC JFETs for Power Module Applications
p.1167

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Design and Characterization of 50W Switch Mode...

Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFET

Abstract:

The 50W Quasi-resonant mode SMPS which adopted a normally-on-type SiC JFET as a switch has been designed and characterized. A simple decision circuit and an auxiliary power supply was utilized to safely protect the JFET from an in-rush current at initial operation stage and to provide sufficient negative voltage for a complete JFET drive. Even without a refine engineering, the SMPS showed 96% efficiency at a full load state.