Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits

Arnaud Devie; Dominique Tournier; Philippe Godignon; Miquel Vellvehi; Josep Montserrat; Xavier Jordá

doi:10.4028/www.scientific.net/MSF.645-648.1159

Paper Titles

NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications
p.1143

600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration
p.1147

Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFET
p.1151

A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT
p.1155

Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits
p.1159

Mixed Mode Modeling and Characterization of a 4H-SiC Power DMOSFET Based DC-DC Power Converter
p.1163

SiC JFETs for Power Module Applications
p.1167

System Improvements of Photovoltaic Inverters with SiC-Transistors
p.1171

Discussion of Turn on Current Peaks of SiC Switches in Half Bridges
p.1177

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Fabrication and Testing of 4H-SiC MESFETs for...

Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits

Abstract:

Lateral normally-on dual gates MESFETs withstanding a drain/source voltage in excess of 200V have been fabricated on semi-insulating 4H-SiC substrate. This paper reports on the fabrication, DC characterization and in-circuit behavior of the MESFETs. Temperature dependent DC characterization has been carried out up to 473K. The performances of basic analog circuits such as an amplifier and a clock, using these MESFETs, are detailed and analyzed.