Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits

Abstract:

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Lateral normally-on dual gates MESFETs withstanding a drain/source voltage in excess of 200V have been fabricated on semi-insulating 4H-SiC substrate. This paper reports on the fabrication, DC characterization and in-circuit behavior of the MESFETs. Temperature dependent DC characterization has been carried out up to 473K. The performances of basic analog circuits such as an amplifier and a clock, using these MESFETs, are detailed and analyzed.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

1159-1162

DOI:

10.4028/www.scientific.net/MSF.645-648.1159

Citation:

A. Devie et al., "Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits", Materials Science Forum, Vols. 645-648, pp. 1159-1162, 2010

Online since:

April 2010

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Price:

$35.00

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