Discussion of Turn on Current Peaks of SiC Switches in Half Bridges

Immo Koch; Wolf Rüdiger Canders

doi:10.4028/www.scientific.net/MSF.645-648.1177

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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Discussion of Turn on Current Peaks of SiC...

Discussion of Turn on Current Peaks of SiC Switches in Half Bridges

Abstract:

The optimal control parameters for semiconductor switches at the development state with new materials and structures are often unidentified. By using those sample switches with a gate control set by investigating one switch only, parasitic influences might lead to increased switching losses in half bridges [1, 2]. The focus of this paper is on an effect at turn on by using for example normally on JFET as high and low side switch. At this an increased current peak might occur which leads to higher switching losses. By adjusting the gate voltage losses can be economized.

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

1177-1180

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.1177

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Online since:

April 2010

Authors:

Immo Koch, Wolf Rüdiger Canders

Keywords:

Normally ON, Switching Loss

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References

[1] I. Koch, W. -R. Canders: Comparison of SiC-JFET and Si-IGBT inverter losses, Mater. Sci. Forum Vols. 615-617 (2009), p.907.

DOI: 10.4028/www.scientific.net/msf.615-617.907

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[2] B. Allebrand, H. -P. Nee: Comparison of commutation transients of inverters with silicon carbide JFETs with and without body diodes. NORPIE 2004, Trondheim.

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[3] J. Lutz: Halbleiter-Leistungsbauelemente. Springer-Verlag, Berlin Heidelberg 2006. ids, T2 [5 A/div] Vgs, T2 [10 V/div] t [200 ns/div] Vgs, T1 [10 V/div] vds, T2 [200 V/div].

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