AlN Substrates and Epitaxy Results

Yuri Makarov; T.Yu. Chemekova; O.V. Avdeev; N. Mokhov; S.S. Nagalyuk; M.G. Ramm; Heikki Helava

doi:10.4028/www.scientific.net/MSF.645-648.1183

Paper Titles

Mixed Mode Modeling and Characterization of a 4H-SiC Power DMOSFET Based DC-DC Power Converter
p.1163

SiC JFETs for Power Module Applications
p.1167

System Improvements of Photovoltaic Inverters with SiC-Transistors
p.1171

Discussion of Turn on Current Peaks of SiC Switches in Half Bridges
p.1177

AlN Substrates and Epitaxy Results
p.1183

Free Standing AlN Single Crystal Grown on Pre-Patterned and In Situ Patterned 4H-SiC Substrates
p.1187

Growth of Nanocrystalline Translucent h-BN Films Deposited by CVD at High Temperature on SiC Substrates
p.1191

Deep-Level Defects in AlN Single Crystals: EPR Studies
p.1195

Quality Control and Electrical Properties of Thin Amorphous (SiC)_1-x(AlN)_x Films Produced by Radio Frequency Dual Magnetron Sputtering
p.1199

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648AlN Substrates and Epitaxy Results

AlN Substrates and Epitaxy Results

Abstract:

AlN substrates are produced by Physical Vapor Transport (PVT) growth of AlN bulk single crystals followed by post growth processing of the crystals (calibration, slicing, lapping, and polishing). The AlN substrates are suitable for epitaxial growth. The substrates may be used for development of devices such as ultra violet (UV) light emitting diodes (LEDs) and laser diodes (LDs), Piezo-Electric Transducers, SAW devices, RF Transistors, etc.