AlN Substrates and Epitaxy Results

Abstract:

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AlN substrates are produced by Physical Vapor Transport (PVT) growth of AlN bulk single crystals followed by post growth processing of the crystals (calibration, slicing, lapping, and polishing). The AlN substrates are suitable for epitaxial growth. The substrates may be used for development of devices such as ultra violet (UV) light emitting diodes (LEDs) and laser diodes (LDs), Piezo-Electric Transducers, SAW devices, RF Transistors, etc.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

1183-1186

DOI:

10.4028/www.scientific.net/MSF.645-648.1183

Citation:

Y. N. Makarov et al., "AlN Substrates and Epitaxy Results", Materials Science Forum, Vols. 645-648, pp. 1183-1186, 2010

Online since:

April 2010

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Price:

$35.00

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