Free Standing AlN Single Crystal Grown on Pre-Patterned and In Situ Patterned 4H-SiC Substrates

Gholam Reza Yazdi; Konstantin Vassilevski; José M. Córdoba; Daniela Gogova; Irina P. Nikitina; Mikael Syväjärvi; Magnus Odén; Nicolas G. Wright; Rositza Yakimova

doi:10.4028/www.scientific.net/MSF.645-648.1187

Paper Titles

SiC JFETs for Power Module Applications
p.1167

System Improvements of Photovoltaic Inverters with SiC-Transistors
p.1171

Discussion of Turn on Current Peaks of SiC Switches in Half Bridges
p.1177

AlN Substrates and Epitaxy Results
p.1183

Free Standing AlN Single Crystal Grown on Pre-Patterned and In Situ Patterned 4H-SiC Substrates
p.1187

Growth of Nanocrystalline Translucent h-BN Films Deposited by CVD at High Temperature on SiC Substrates
p.1191

Deep-Level Defects in AlN Single Crystals: EPR Studies
p.1195

Quality Control and Electrical Properties of Thin Amorphous (SiC)_1-x(AlN)_x Films Produced by Radio Frequency Dual Magnetron Sputtering
p.1199

Calculations of the Spontaneous Polarizations and Dielectric Constants for AlN, GaN, InN, and SiC
p.1203

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Free Standing AlN Single Crystal Grown on...

Free Standing AlN Single Crystal Grown on Pre-Patterned and In Situ Patterned 4H-SiC Substrates

Abstract:

Free standing AlN wafers were grown on pre-patterned and in situ patterned 4H-SiC substrates by a physical vapor transport method. It is based on the coalescence of AlN microrods, which evolve from the apex of SiC pyramids grown on the SiC substrate during a temperature ramp up for in situ patterned substrate and SiC pyramids formed by reactive ion etching (RIE). This process yields stress-free (according XRD and Raman results) AlN single crystals with a thickness up to 400 µm and low dislocation density.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2009

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

1187-1190

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.1187

Citation:

Cite this paper

Online since:

April 2010

Authors:

Gholam Reza Yazdi, Konstantin Vassilevski, José M. Córdoba, Daniela Gogova, Irina P. Nikitina, Mikael Syväjärvi, Magnus Odén, Nicolas G. Wright, Rositza Yakimova

Keywords:

Etching, Hexagonal Pyramid, PVT Growth

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] M. Losurdo, P. Capezzuto, G. Bruno, A. Brown, T. Kim, C. Yi, D.N. Zakharov and Z. Liliental- Weber, App. Phys. Lett: Vol. 86 (2005), p.021920.

DOI: 10.1063/1.1852703

Google Scholar

[2] M. Imura, K. Nakano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi and A. Bandoh., Jpn. J. Appl. Phys: Vol. 45 (2006), p.8639.

DOI: 10.1143/jjap.45.8639

Google Scholar

[3] K. Yasui, S. Hoshino and T. Akahane, Appl. Surf. Sci : Vol. 159-160 (2000), p.462.

Google Scholar

[4] F.A. Ponce and D. Bour, Nature: Vol. 386 (1997), p.351.

Google Scholar

[5] B. Raghothamachar, M. Dudley, J.C. Rojo, K. Morgan and L.J. Schowalter, J. Cryst. Growth: Vol. 250 (2003), p.244.

Google Scholar

[6] G. R. Yazdi, M. Syväjärvi and R. Yakimova, Appl. Phys. Lett: Vol. 90 (2007), p.123103.

Google Scholar

[7] G.R. Yazdi, M. Beckers, F. Giuliani, M. Syväjärvi, L. Hultman and R. Yakimova, Appl. Phys. Lett: Vol. 94 (2009), p.082109.

DOI: 10.1063/1.3085958

Google Scholar