Free Standing AlN Single Crystal Grown on Pre-Patterned and In Situ Patterned 4H-SiC Substrates

Abstract:

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Free standing AlN wafers were grown on pre-patterned and in situ patterned 4H-SiC substrates by a physical vapor transport method. It is based on the coalescence of AlN microrods, which evolve from the apex of SiC pyramids grown on the SiC substrate during a temperature ramp up for in situ patterned substrate and SiC pyramids formed by reactive ion etching (RIE). This process yields stress-free (according XRD and Raman results) AlN single crystals with a thickness up to 400 µm and low dislocation density.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

1187-1190

DOI:

10.4028/www.scientific.net/MSF.645-648.1187

Citation:

G. R. Yazdi et al., "Free Standing AlN Single Crystal Grown on Pre-Patterned and In Situ Patterned 4H-SiC Substrates", Materials Science Forum, Vols. 645-648, pp. 1187-1190, 2010

Online since:

April 2010

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Price:

$35.00

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