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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Calculations of the Spontaneous Polarizations and...

Calculations of the Spontaneous Polarizations and Dielectric Constants for AlN, GaN, InN, and SiC

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Abstract:

Within the scope of the Harrison’s bond orbital model the spontaneous polarization, high- and low frequency dielectric constants are obtained in an analytical form. Theoretical results are in a reasonable agreement with the experimental data available and the numerical calculations based on the ab initio methods.

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Silicon Carbide and Related Materials 2009

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Periodical:

Materials Science Forum (Volumes 645-648)

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1203-1206

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.1203

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Online since:

April 2010

Authors:

Sergey Y. Davydov, Alexander A. Lebedev

Keywords:

Dielectric Susceptibiles, Spontaneous Polarization

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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