Calculations of the Spontaneous Polarizations and Dielectric Constants for AlN, GaN, InN, and SiC

Abstract:

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Within the scope of the Harrison’s bond orbital model the spontaneous polarization, high- and low frequency dielectric constants are obtained in an analytical form. Theoretical results are in a reasonable agreement with the experimental data available and the numerical calculations based on the ab initio methods.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

1203-1206

DOI:

10.4028/www.scientific.net/MSF.645-648.1203

Citation:

S. Y. Davydov and A. A. Lebedev, "Calculations of the Spontaneous Polarizations and Dielectric Constants for AlN, GaN, InN, and SiC", Materials Science Forum, Vols. 645-648, pp. 1203-1206, 2010

Online since:

April 2010

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$35.00

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