Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al0.2Ga0.8N Accumulation-Mode FET Devices

Marko J. Tadjer; Karl D. Hobart; Michael E. Mastro; Travis J. Anderson; Eugene A. Imhoff; Fritz J. Kub; Jennifer K. Hite; Charles R. Eddy

doi:10.4028/www.scientific.net/MSF.645-648.1215

Paper Titles

Quality Control and Electrical Properties of Thin Amorphous (SiC)_1-x(AlN)_x Films Produced by Radio Frequency Dual Magnetron Sputtering
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Calculations of the Spontaneous Polarizations and Dielectric Constants for AlN, GaN, InN, and SiC
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2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility
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Evolution of the Electrical Behaviour of GaN and AlGaN Materials after High Temperature Annealing and Thermal Oxidation
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Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al_0.2Ga_0.8N Accumulation-Mode FET Devices
p.1215

2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) Substrates
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Energy Optimization of As+ Ion Implantation on SiO₂ Passivation Layer of AlGaN/GaN HEMTs
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Characteristics of Diamond SBD’s Fabricated on Half Inch Size CVD Wafer Made by the “Direct Wafer Fabrication Technique”
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High Temperature Characteristics of Diamond SBDs
p.1231

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Effect of Temperature and Al Concentration on the...

Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al_0.2Ga_0.8N Accumulation-Mode FET Devices

Abstract:

Field-effect transistors were fabricated on GaN and Al0.2Ga0.8N epitaxial layers grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrates. The threshold voltage VTH was higher when AlGaN was used as an active layer. VTH also increased with temperature due to the increased positive polarization charge at the GaN/AlN buffer/sapphire interfaces. Drain current increased at high temperatures even with more positive threshold voltage, which makes GaN-based FET devices attractive for high temperature operation.