Energy Optimization of As+ Ion Implantation on SiO2 Passivation Layer of AlGaN/GaN HEMTs

Ji Yong Lim; Young Hwan Choi; Young Shil Kim; Min Ki Kim; Min Koo Han

doi:10.4028/www.scientific.net/MSF.645-648.1223

Paper Titles

2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility
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Evolution of the Electrical Behaviour of GaN and AlGaN Materials after High Temperature Annealing and Thermal Oxidation
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Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al_0.2Ga_0.8N Accumulation-Mode FET Devices
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2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) Substrates
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Energy Optimization of As+ Ion Implantation on SiO₂ Passivation Layer of AlGaN/GaN HEMTs
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Characteristics of Diamond SBD’s Fabricated on Half Inch Size CVD Wafer Made by the “Direct Wafer Fabrication Technique”
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High Temperature Characteristics of Diamond SBDs
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Field Effect Transistors Based on Catalyst-Free Grown 3C-SiC Nanowires
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Nitrogen Centers in Nanodiamonds: EPR Studies
p.1239

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648 Energy Optimization of As+ Ion Implantation on...

Energy Optimization of As+ Ion Implantation on SiO₂ Passivation Layer of AlGaN/GaN HEMTs

Abstract:

We have fabricated SiO2 passivated AlGaN/GaN HEMTs and employed As+ ion implantation on the passivation layer and optimized the implantation energy. After As+ ion implantation with 120 keV energy and 1 × 1014 /cm2 dose, the maximum drain current, maximum transconductance and the breakdown voltage increased to 419.6 mA/mm, 87.9 mS/mm and 698 V while those of the conventional device was 317.0 mA/mm, 65.1 mS/mm and 639 V, respectively.