Field Effect Transistors Based on Catalyst-Free Grown 3C-SiC Nanowires

Konstantinos Rogdakis; Edwige Bano; Laurent Montes; M. Bechelany; David Cornu; Konstantinos Zekentes

doi:10.4028/www.scientific.net/MSF.645-648.1235

Paper Titles

Evolution of the Electrical Behaviour of GaN and AlGaN Materials after High Temperature Annealing and Thermal Oxidation
p.1211

Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al_0.2Ga_0.8N Accumulation-Mode FET Devices
p.1215

2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) Substrates
p.1219

Energy Optimization of As+ Ion Implantation on SiO₂ Passivation Layer of AlGaN/GaN HEMTs
p.1223

Characteristics of Diamond SBD’s Fabricated on Half Inch Size CVD Wafer Made by the “Direct Wafer Fabrication Technique”
p.1227

High Temperature Characteristics of Diamond SBDs
p.1231

Field Effect Transistors Based on Catalyst-Free Grown 3C-SiC Nanowires
p.1235

Nitrogen Centers in Nanodiamonds: EPR Studies
p.1239

Silicon-on-SiC, a Novel Semiconductor Structure for Power Devices
p.1243

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Field Effect Transistors Based on Catalyst-Free Grown 3C-SiC Nanowires

Abstract:

Back-gated field effect transistors (FETs) based on catalyst-free grown 3C-SiC nanowires (NWs) were fabricated and electrical characterization is presented. Silvaco simulation was used to fit the I-V characteristics and to extract information about the carrier (electrons) concentration and the oxide/NW interface quality. The high trap density and fixed charges at the nanowire/oxide interface, Dit~5x1011 cm-2eV-1 and Qf ~3x1013cm-2, and the high electron concentration (~3x1019 cm-3) originating from unintentional doping severely affect the electrical conduction through the nanowires which has as a result low values of mobility and transconductance, 0.11 cm2/Vs and 7x10-10 A/V, respectively.