Field Effect Transistors Based on Catalyst-Free Grown 3C-SiC Nanowires

Abstract:

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Back-gated field effect transistors (FETs) based on catalyst-free grown 3C-SiC nanowires (NWs) were fabricated and electrical characterization is presented. Silvaco simulation was used to fit the I-V characteristics and to extract information about the carrier (electrons) concentration and the oxide/NW interface quality. The high trap density and fixed charges at the nanowire/oxide interface, Dit~5x1011 cm-2eV-1 and Qf ~3x1013cm-2, and the high electron concentration (~3x1019 cm-3) originating from unintentional doping severely affect the electrical conduction through the nanowires which has as a result low values of mobility and transconductance, 0.11 cm2/Vs and 7x10-10 A/V, respectively.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

1235-1238

DOI:

10.4028/www.scientific.net/MSF.645-648.1235

Citation:

K. Rogdakis et al., "Field Effect Transistors Based on Catalyst-Free Grown 3C-SiC Nanowires", Materials Science Forum, Vols. 645-648, pp. 1235-1238, 2010

Online since:

April 2010

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Price:

$35.00

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