High Temperature Characteristics of Diamond SBDs

Hitoshi Umezawa; Kazuhiro Ikeda; Ramanujam Kumaresan; Shinichi Shikata

doi:10.4028/www.scientific.net/MSF.645-648.1231

Paper Titles

Evolution of the Electrical Behaviour of GaN and AlGaN Materials after High Temperature Annealing and Thermal Oxidation
p.1211

Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al_0.2Ga_0.8N Accumulation-Mode FET Devices
p.1215

2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) Substrates
p.1219

Energy Optimization of As+ Ion Implantation on SiO₂ Passivation Layer of AlGaN/GaN HEMTs
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Characteristics of Diamond SBD’s Fabricated on Half Inch Size CVD Wafer Made by the “Direct Wafer Fabrication Technique”
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High Temperature Characteristics of Diamond SBDs
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Field Effect Transistors Based on Catalyst-Free Grown 3C-SiC Nanowires
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Nitrogen Centers in Nanodiamonds: EPR Studies
p.1239

Silicon-on-SiC, a Novel Semiconductor Structure for Power Devices
p.1243

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648High Temperature Characteristics of Diamond SBDs

High Temperature Characteristics of Diamond SBDs

Abstract:

Because of the superior material properties of diamond, high performance in high-temperature power device application is demonstrated in both the computational and the experimental studies. A calculated Baliga limit of diamond Schottky barrier diode (SBD) based on 1D model indicates that an increase in on-resistance is highly expected within the high blocking voltage region and will be remarkable at high temperature conditions. Because of the high barrier height of diamond SBDs, the reverse leakage current is suppressed even at high temperatures. From the high-temperature stability test, stable interfaces of metal/diamond contact with constant Schottky barrier height have been confirmed. The SBD works for more than 1500 hrs at 400oC.

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Materials Science Forum (Volumes 645-648)

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1231-1234

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.1231

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Online since:

April 2010

Authors:

Hitoshi Umezawa, Kazuhiro Ikeda, Ramanujam Kumaresan, Shinichi Shikata

Keywords:

High Temperature Operation, Power Device, Reliability, Schottky Barrier Diode (SBD)

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