Characteristics of Diamond SBD’s Fabricated on Half Inch Size CVD Wafer Made by the “Direct Wafer Fabrication Technique”
Diamond is a hopeful candidate for power switching device which can operate at high temperature as a “Cooling system free” device, yet at a high current. Recently we have developed a 3D diamond CVD growth method coupled with a sophisticated “direct wafer fabrication technique” to fabricate diamond wafer without slicing. Currently, half inch size single crystal diamond substrates are available for R&D of diamond device. Using this technique, we have increased the device fabrication size from 3x3mm2 to half inch wafer. In this paper, we present the results of measurements on the first device fabricated on a half inch size CVD substrate. We have carried out the first device characteristics mapping for diamond, and have observed the influence of substrate characteristics on the SBD characteristics.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
S. Shikata et al., "Characteristics of Diamond SBD’s Fabricated on Half Inch Size CVD Wafer Made by the “Direct Wafer Fabrication Technique” ", Materials Science Forum, Vols. 645-648, pp. 1227-1230, 2010