Characteristics of Diamond SBD’s Fabricated on Half Inch Size CVD Wafer Made by the “Direct Wafer Fabrication Technique”

Shinichi Shikata; Hitoshi Umezawa; Hideaki Yamada; T. Tsubouchi; Yoshiaki Mokuno; Akiyoshi Chayahara

doi:10.4028/www.scientific.net/MSF.645-648.1227

Paper Titles

Evolution of the Electrical Behaviour of GaN and AlGaN Materials after High Temperature Annealing and Thermal Oxidation
p.1211

Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al_0.2Ga_0.8N Accumulation-Mode FET Devices
p.1215

2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) Substrates
p.1219

Energy Optimization of As+ Ion Implantation on SiO₂ Passivation Layer of AlGaN/GaN HEMTs
p.1223

Characteristics of Diamond SBD’s Fabricated on Half Inch Size CVD Wafer Made by the “Direct Wafer Fabrication Technique”
p.1227

High Temperature Characteristics of Diamond SBDs
p.1231

Field Effect Transistors Based on Catalyst-Free Grown 3C-SiC Nanowires
p.1235

Nitrogen Centers in Nanodiamonds: EPR Studies
p.1239

Silicon-on-SiC, a Novel Semiconductor Structure for Power Devices
p.1243

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Characteristics of Diamond SBD’s Fabricated on...

Characteristics of Diamond SBD’s Fabricated on Half Inch Size CVD Wafer Made by the “Direct Wafer Fabrication Technique”

Abstract:

Diamond is a hopeful candidate for power switching device which can operate at high temperature as a “Cooling system free” device, yet at a high current. Recently we have developed a 3D diamond CVD growth method coupled with a sophisticated “direct wafer fabrication technique” to fabricate diamond wafer without slicing. Currently, half inch size single crystal diamond substrates are available for R&D of diamond device. Using this technique, we have increased the device fabrication size from 3x3mm2 to half inch wafer. In this paper, we present the results of measurements on the first device fabricated on a half inch size CVD substrate. We have carried out the first device characteristics mapping for diamond, and have observed the influence of substrate characteristics on the SBD characteristics.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2009

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

1227-1230

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.1227

Citation:

Cite this paper

Online since:

April 2010

Authors:

Shinichi Shikata, Hitoshi Umezawa, Hideaki Yamada, T. Tsubouchi, Yoshiaki Mokuno, Akiyoshi Chayahara

Keywords:

Schottky Barrier Diode (SBD)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] B.J. Baliga, J. Appl. Phys., Vol. 53 (1982), p.1759.

Google Scholar

[2] A.Q. Huang, IEEE Electr. Dev. Lett., Vol. 25 (2004), p.298.

Google Scholar

[3] Y. Nishibayasi, N. Toda,H. Shiomi and S. Shikata, 4th Int'l Conf. New Diamond and Sci. and Technol., Proc. (1994), p.717.

Google Scholar

[4] K. Ikeda, H. Umezawa, R. Kumaresan and S. Shikata, Appl. Phy. Express, Vol. 2 (2009), p.011202.

Google Scholar

[5] H. Umezawa, N. Tokuda, M. Ogura, S.G. Ri, S. Shikata, Diamond & Related Materials Vol. 15 (2006), p. (1949).

Google Scholar

[6] K. Ikeda, H. Umezawa and S. Shikata, Diamond & Related Materials, Vol. 17 (2008), p.809.

Google Scholar

[7] H. Umezawa, K. Ikeda, R. Kumaresan, N. Tatsumi, and S. Shikata IEEE Electron Device Letters, Vol. 30, (2009), p.960.

DOI: 10.1109/led.2009.2026439

Google Scholar

[8] H. Umezawa, K. Ikeda,R. Kumaresan, N. Tatsumi and S. Shikata, Materials Science Forum, Vol. 615-617 (2009), p.1003.

DOI: 10.4028/www.scientific.net/msf.615-617.1003

Google Scholar

[9] S. Shikata, K. Ikeda, R. KUmaresan, H. Umezawa and N. Tastumi, Materials Science Forum, Vol. 615-617, (2009) p.999.

DOI: 10.4028/www.scientific.net/msf.615-617.999

Google Scholar

[10] Y. Mokuno, A. Chayahara and H. Yamada, Diamond and Related Materials Vol. 17 (2008), p.415.

Google Scholar

[11] Y. Mokuno,A. Chayahara, H. Yamada and N. Tsubouchi, Materials Science Forum, Vol. 615-617 (2009), p.991.

DOI: 10.4028/www.scientific.net/msf.615-617.991

Google Scholar

[12] H. Sumiya, N. Toda,Y. Nishibayashi and S. Satoh, J. Crystal Growth, Vol. 178 (1997), p.485.

Google Scholar

[13] Y. Mokuno, A. Chayahara, Y. Soda, H. Yamada, Y. Horino, N. Fujimori Diamond and Related Materials, Vol. 15 (2006), p.455.

DOI: 10.1016/j.diamond.2005.11.046

Google Scholar