Growth of Nanocrystalline Translucent h-BN Films Deposited by CVD at High Temperature on SiC Substrates

Ghassan Younes; Gabriel Ferro; Maher Soueidan; Arnaud Brioude; François Cauwet

doi:10.4028/www.scientific.net/MSF.645-648.1191

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AlN Substrates and Epitaxy Results
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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Growth of Nanocrystalline Translucent h-BN Films...

Growth of Nanocrystalline Translucent h-BN Films Deposited by CVD at High Temperature on SiC Substrates

Abstract:

h-BN layers were deposited on α-SiC substrates by CVD at high temperature (1500-1900°C) using B2H6 and NH3 diluted in Ar. Growth rates were in the 6-10 µm/h range. In all the conditions studied, the BN as deposited layers were found to be translucent to light, some having a light whitish aspect and other a more yellowish one. It was also observed that the deposit was not always adhesive. µ-Raman and TEM characterization showed that the layers were nano-crystalline with crystallite size < 10 nm. The growth rate was found temperature and N/B ratio dependent due to an N limited growth regime which is more pronounced above 1700°C.

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Materials Science Forum (Volumes 645-648)

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1191-1194

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https://doi.org/10.4028/www.scientific.net/MSF.645-648.1191

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April 2010

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Ghassan Younes, Gabriel Ferro, Maher Soueidan, Arnaud Brioude, François Cauwet

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Chemical Vapor Deposition (CVD)

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