Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures

Satoshi Tanimoto; Naoki Nishio; Tatsuhiro Suzuki; Yoshinori Murakami; Hiromichi Ohashi; Hiroshi Yamaguchi; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.645-648.1139

Paper Titles

Performance and Reliability of SiC MOSFETs for High-Current Power Modules
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Inverter Loss Reduction Using 3kV SiC-JBS Diode and High-Speed Drive Circuit
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Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material
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Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from -150 °C to +500 °C
p.1135

Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures
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NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications
p.1143

600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration
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Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFET
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A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT
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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Electromigration Reliability of the Contact Hole...

Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures

Abstract:

It is strongly desired to operate SiC power devices at higher junction temperatures (Tj), but that often entails problems because they contain a variety of materials with thermal activity or weakness. An example of such troubles is the steep increase in resistance of the Al electrode in the source (or emitter) contact holes, caused by electromigration (EM). In this work, EM reliability of the contact hole in SiC power devices was evaluated for an improved Al electrode sandwiched between thin TaN layers. An estimated mean time to failure (MTTF) of approximately 3400 years was achieved under conditions of Tj = 300°C and J = 104 A/cm2.

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

1139-1142

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.1139

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Online since:

April 2010

Authors:

Satoshi Tanimoto, Naoki Nishio, Tatsuhiro Suzuki, Yoshinori Murakami, Hiromichi Ohashi, Hiroshi Yamaguchi, Hajime Okumura

Keywords:

Aluminum Electrode, Electromigration, Power Device

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