Performance and Reliability of SiC MOSFETs for High-Current Power Modules
We address the two critical challenges that currently limit the applicability of SiC MOSFETs in commercial power conversion systems: high-temperature gate oxide reliability and high total current rating. We demonstrate SiC MOSFETs with predicted gate oxide reliability of >106 hours (100 years) operating at a gate oxide electric field of 4 MV/cm at 250°C. To scale to high total currents, we develop the Power Overlay planar packaging technique to demonstrate SiC MOSFET power modules with total on-resistance as low as 7.5 m. We scale single die SiC MOSFETs to high currents, demonstrating a large area SiC MOSFET (4.5mm x 4.5 mm) with a total on-resistance of 30 m, specific on-resistance of 5 m-cm2 and blocking voltage of 1400V.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
K. Matocha et al., "Performance and Reliability of SiC MOSFETs for High-Current Power Modules", Materials Science Forum, Vols. 645-648, pp. 1123-1126, 2010