Performance and Reliability of SiC MOSFETs for High-Current Power Modules

Kevin Matocha; Peter A. Losee; Arun Gowda; Eladio Delgado; Greg Dunne; Richard Beaupre; Ljubisa Stevanovic

doi:10.4028/www.scientific.net/MSF.645-648.1123

Paper Titles

Fully-Integrated 6H-SiC JFET Amplifiers for High-Temperature Sensing
p.1107

Application of SiC Normally-On JFETs in Photovoltaic Power Converters: Suitable Circuits and Potentials
p.1111

Fabrication of SiC JFET-Based Monolithic Integrated Circuits
p.1115

Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules
p.1119

Performance and Reliability of SiC MOSFETs for High-Current Power Modules
p.1123

Inverter Loss Reduction Using 3kV SiC-JBS Diode and High-Speed Drive Circuit
p.1127

Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material
p.1131

Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from -150 °C to +500 °C
p.1135

Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures
p.1139

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Performance and Reliability of SiC MOSFETs for...

Performance and Reliability of SiC MOSFETs for High-Current Power Modules

Abstract:

We address the two critical challenges that currently limit the applicability of SiC MOSFETs in commercial power conversion systems: high-temperature gate oxide reliability and high total current rating. We demonstrate SiC MOSFETs with predicted gate oxide reliability of >106 hours (100 years) operating at a gate oxide electric field of 4 MV/cm at 250°C. To scale to high total currents, we develop the Power Overlay planar packaging technique to demonstrate SiC MOSFET power modules with total on-resistance as low as 7.5 m. We scale single die SiC MOSFETs to high currents, demonstrating a large area SiC MOSFET (4.5mm x 4.5 mm) with a total on-resistance of 30 m, specific on-resistance of 5 m-cm2 and blocking voltage of 1400V.