Inverter Loss Reduction Using 3kV SiC-JBS Diode and High-Speed Drive Circuit

Katsumi Ishikawa; Kazutoshi Ogawa; Norihumi Kameshiro; Hidekatsu Onose; Masahiro Nagasu

doi:10.4028/www.scientific.net/MSF.645-648.1127

Paper Titles

Application of SiC Normally-On JFETs in Photovoltaic Power Converters: Suitable Circuits and Potentials
p.1111

Fabrication of SiC JFET-Based Monolithic Integrated Circuits
p.1115

Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules
p.1119

Performance and Reliability of SiC MOSFETs for High-Current Power Modules
p.1123

Inverter Loss Reduction Using 3kV SiC-JBS Diode and High-Speed Drive Circuit
p.1127

Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material
p.1131

Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from -150 °C to +500 °C
p.1135

Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures
p.1139

NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications
p.1143

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Inverter Loss Reduction Using 3kV SiC-JBS Diode...

Inverter Loss Reduction Using 3kV SiC-JBS Diode and High-Speed Drive Circuit

Abstract:

We developed a JBS diode with characteristics of a low forward voltage and a low leakage current at 3kV. Further, we built a prototype of a 3kV/200A hybrid module, equipped with Si-IGBTs and SiC-JBS diodes. We attempted to decrease the recovery loss, and the decrease in the turn-on power loss, by using a hybrid module and a high-speed drive circuit. Moreover, we estimated that the total energy loss of the converter and the inverter were reduced to about 33%.