Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material

Viorel Banu; Pierre Brosselard; Xavier Jordá; Philippe Godignon; José Millan

doi:10.4028/www.scientific.net/MSF.645-648.1131

Paper Titles

Fabrication of SiC JFET-Based Monolithic Integrated Circuits
p.1115

Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules
p.1119

Performance and Reliability of SiC MOSFETs for High-Current Power Modules
p.1123

Inverter Loss Reduction Using 3kV SiC-JBS Diode and High-Speed Drive Circuit
p.1127

Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material
p.1131

Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from -150 °C to +500 °C
p.1135

Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures
p.1139

NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications
p.1143

600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration
p.1147

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Demonstration of High Temperature Bandgap Voltage...

Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material

Abstract:

This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible with SiC. This paper reports the simulated and experimental results as well and a practical and simplified vision on the principles of thermally compensated voltage reference circuits, usually named bandgap references. For our demonstration, we have used SiC Schottky diodes. The influence of the barrier height and the ideality factor on the voltage reference and a comparison between simulated and experimental results are also presented.

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Materials Science Forum (Volumes 645-648)

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1131-1134

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https://doi.org/10.4028/www.scientific.net/MSF.645-648.1131

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April 2010

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Viorel Banu, Pierre Brosselard, Xavier Jordá, Philippe Godignon, José Millan

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