Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material
This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible with SiC. This paper reports the simulated and experimental results as well and a practical and simplified vision on the principles of thermally compensated voltage reference circuits, usually named bandgap references. For our demonstration, we have used SiC Schottky diodes. The influence of the barrier height and the ideality factor on the voltage reference and a comparison between simulated and experimental results are also presented.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
V. Banu et al., "Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material", Materials Science Forum, Vols. 645-648, pp. 1131-1134, 2010