Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy

Michael Dudley; Ning Zhang; Yu Zhang; Balaji Raghothamachar; Edward Sanchez

doi:10.4028/www.scientific.net/MSF.645-648.295

Paper Titles

On the Luminescence and Driving Force of Stacking Faults in 4H-SiC
p.277

Systematic First Principles Calculations of the Effects of Stacking Fault Defects on the 4H-SiC Band Structure
p.283

In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate
p.287

Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density
p.291

Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy
p.295

Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC
p.299

Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers
p.303

Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers
p.307

Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates
p.311

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Nucleation of c-Axis Screw Dislocations at...

Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy

Abstract:

Observations of dislocation nucleation occurring at substrate surface scratches during 4H-SiC CVD homoepitaxial growth are reported. Sub-surface residual damage associated with the scratches is observed to act as nucleation sites for basal plane dislocations (BPDs), threading edge dislocations (TEDs) and threading screw dislocations (TSDs) in the epilayer. TEDs and BPDs replicate from the surface intersections of basal plane dislocation half-loops injected into the substrate surface. A model for the nucleation mechanism of TSDs, which nucleate in opposite sign pairs, is presented which involves overgrowth of surface indentations associated with the scratch during step flow growth. Atomic steps which approach these local surface indentations can collapse creating pairs of opposite sign screw dislocations which have Burgers vector magnitude equal to the magnitude of the step disregistry created during the collapse.

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Silicon Carbide and Related Materials 2009

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

295-298

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.295

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Online since:

April 2010

Authors:

Michael Dudley, Ning Zhang, Yu Zhang, Balaji Raghothamachar, Edward Sanchez

Keywords:

Chemical Vapor Deposition (CVD), Threading Edge Dislocation, Threading Screw Dislocation

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References

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DOI: 10.1063/1.124512

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