Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates
Dislocations in highly nitrogen-doped (N > 1×1019 cm-3) low-resistivity ( < 10 mcm) 4H-SiC substrates were investigated by photoluminescence imaging, synchrotron X-ray topography, and defect selective etching using molten KOH. The behavior of dislocations is discussed particularly in terms of their glide motion in the presence of a high concentration of nitrogen. The results indicate that nitrogen impurities up to mid 1019 cm-3 concentration do not show any discernible influence on the glide behavior of basal plane dislocations (BPDs) in 4H-SiC crystals grown by physical vapor transport (PVT) method.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
M. Katsuno et al., "Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates", Materials Science Forum, Vols. 645-648, pp. 311-314, 2010