Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates

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Dislocations in highly nitrogen-doped (N > 1×1019 cm-3) low-resistivity ( < 10 mcm) 4H-SiC substrates were investigated by photoluminescence imaging, synchrotron X-ray topography, and defect selective etching using molten KOH. The behavior of dislocations is discussed particularly in terms of their glide motion in the presence of a high concentration of nitrogen. The results indicate that nitrogen impurities up to mid 1019 cm-3 concentration do not show any discernible influence on the glide behavior of basal plane dislocations (BPDs) in 4H-SiC crystals grown by physical vapor transport (PVT) method.

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Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

311-314

DOI:

10.4028/www.scientific.net/MSF.645-648.311

Citation:

M. Katsuno et al., "Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates", Materials Science Forum, Vols. 645-648, pp. 311-314, 2010

Online since:

April 2010

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$35.00

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