Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates

Masakazu Katsuno; Noboru Ohtani; Masashi Nakabayashi; Tatsuo Fujimoto; Hirokatsu Yashiro; Hiroshi Tsuge; Takashi Aigo; Taizo Hoshino; Hosei Hirano; Wataru Ohashi

doi:10.4028/www.scientific.net/MSF.645-648.311

Paper Titles

Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy
p.295

Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC
p.299

Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers
p.303

Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers
p.307

Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates
p.311

Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy
p.315

Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers
p.319

Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process
p.323

Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers
p.327

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Structural Analysis of Dislocations in Highly...

Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates

Abstract:

Dislocations in highly nitrogen-doped (N > 1×1019 cm-3) low-resistivity ( < 10 mcm) 4H-SiC substrates were investigated by photoluminescence imaging, synchrotron X-ray topography, and defect selective etching using molten KOH. The behavior of dislocations is discussed particularly in terms of their glide motion in the presence of a high concentration of nitrogen. The results indicate that nitrogen impurities up to mid 1019 cm-3 concentration do not show any discernible influence on the glide behavior of basal plane dislocations (BPDs) in 4H-SiC crystals grown by physical vapor transport (PVT) method.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2009

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

311-314

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.311

Citation:

Cite this paper

Online since:

April 2010

Authors:

Masakazu Katsuno, Noboru Ohtani, Masashi Nakabayashi, Tatsuo Fujimoto, Hirokatsu Yashiro, Hiroshi Tsuge, Takashi Aigo, Taizo Hoshino, Hosei Hirano, Wataru Ohashi

Keywords:

Etching

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] R. S. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen and L. J. Brillson: Appl. Phys. Lett. Vol. 79 (2002), p.3056.

DOI: 10.1063/1.1415347

Google Scholar

[2] M. Katsuno, M. Nakabayashi, T. Fujimoto, N. Ohtani, H. Yashiro, H. Tsuge, T. Aigo, T. Hoshino and K. Tatsumi: Materials Science Forum Vol. 600-603 (2009) p.341.

DOI: 10.4028/www.scientific.net/msf.600-603.341

Google Scholar

[3] T.A.G. Eberlein, R. Jones, A.T. Blumenau, S. Öberg and P.R. Briddon: phys. stat. sol. (c) Vol. 4 (2007), p.2923.

Google Scholar

[4] P. Wu, M. Yoganathan, I. Zweiback, Y. Chen and M. Dudley: Materials Science Forum Vol. 600-603 (2009), p.333.

Google Scholar

[5] S.G. Sridhara, F.H.C. Carlsson, J.P. Bergman and E. Janzén: Appl. Phys. Lett. Vol. 79 (2001), p.3944.

Google Scholar

[6] N. Ohtani, M. Katsuno, H. Tsuge, T. Fujimoto, M. Nakabayashi, H. Yashiro, M. Sawamura, T. Aigo and T. Hoshino: Jpn. J. Appl. Phys. Vol. 45 (2006), p.1738.

DOI: 10.1143/jjap.45.1738

Google Scholar

[7] Y. Chen, G. Dhanaraj, M. Dudley, H. Zhang, R. Ma, Y. Shishkin and S. E. Saddow: Mater. Res. Soc. Sym. Proc. Vol. 911 (2006).

Google Scholar