Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers

Abstract:

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Burgers vector directions of threading edge dislocations (TEDs) in 4H-SiC epitaxial layer are distinguished by grazing incidence high resolution topography. Based on comparison between appearance of KOH etch pits and direction of TED Burgers vector, the size difference of the TED etch pits is found to be dependent on their Burgers vector directions. Examining TEDs in the epilayer by topography, the Burgers vector direction of basal plane dislocations (BPDs) in the substrate is identified. Correspondence between the topography contrast and the sense of a BPD is also investigated.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

303-306

DOI:

10.4028/www.scientific.net/MSF.645-648.303

Citation:

I. Kamata et al., "Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers", Materials Science Forum, Vols. 645-648, pp. 303-306, 2010

Online since:

April 2010

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$35.00

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