Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers

Isaho Kamata; Masahiro Nagano; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.645-648.303

Paper Titles

In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate
p.287

Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density
p.291

Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy
p.295

Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC
p.299

Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers
p.303

Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers
p.307

Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates
p.311

Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy
p.315

Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers
p.319

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Characterization of Basal Plane Dislocations in...

Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers

Abstract:

Burgers vector directions of threading edge dislocations (TEDs) in 4H-SiC epitaxial layer are distinguished by grazing incidence high resolution topography. Based on comparison between appearance of KOH etch pits and direction of TED Burgers vector, the size difference of the TED etch pits is found to be dependent on their Burgers vector directions. Examining TEDs in the epilayer by topography, the Burgers vector direction of basal plane dislocations (BPDs) in the substrate is identified. Correspondence between the topography contrast and the sense of a BPD is also investigated.