In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate

Abstract:

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In-grown stacking faults (IGSFs) in thick 4H-SiC epilayers grown at high growth rates have been characterized by micro-photoluminescence (micro-PL) spectroscopy and its intensity mapping. Strong PL emissions from the IGSFs are observed even at room temperature. Three kinds of IGSFs have been identified in the samples based on the micro-PL spectra. Each IGSF shows the specific PL emission peak located at 460 nm, 480 nm, and 500 nm, respectively. The shapes, distributions, and densities of IGSFs in the epilayers are revealed by the micro-PL intensity mapping. The stacking sequences of three IGSFs have been determined as (4,4), (3,5), and (6,2) in the Zhadonov’s notation, respectively, by high-resolution transmission electron microscopy observations. Three identified IGSFs are then classified as quadruple Shockley SFs, triple Shockley SFs, and double Shockley SFs, respectively, based on the shear formation model.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

287-290

DOI:

10.4028/www.scientific.net/MSF.645-648.287

Citation:

G. Feng et al., "In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate", Materials Science Forum, Vols. 645-648, pp. 287-290, 2010

Online since:

April 2010

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$35.00

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