In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate

Gan Feng; Jun Suda; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.645-648.287

Paper Titles

Elastic Properties of Dense Organosilicate Glasses Dependent on the C/Si Ratio
p.267

A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy
p.271

On the Luminescence and Driving Force of Stacking Faults in 4H-SiC
p.277

Systematic First Principles Calculations of the Effects of Stacking Fault Defects on the 4H-SiC Band Structure
p.283

In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate
p.287

Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density
p.291

Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy
p.295

Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC
p.299

Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers
p.303

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648In-Grown Stacking Faults Identified in 4H-SiC...

In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate

Abstract:

In-grown stacking faults (IGSFs) in thick 4H-SiC epilayers grown at high growth rates have been characterized by micro-photoluminescence (micro-PL) spectroscopy and its intensity mapping. Strong PL emissions from the IGSFs are observed even at room temperature. Three kinds of IGSFs have been identified in the samples based on the micro-PL spectra. Each IGSF shows the specific PL emission peak located at 460 nm, 480 nm, and 500 nm, respectively. The shapes, distributions, and densities of IGSFs in the epilayers are revealed by the micro-PL intensity mapping. The stacking sequences of three IGSFs have been determined as (4,4), (3,5), and (6,2) in the Zhadonov’s notation, respectively, by high-resolution transmission electron microscopy observations. Three identified IGSFs are then classified as quadruple Shockley SFs, triple Shockley SFs, and double Shockley SFs, respectively, based on the shear formation model.