Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density

Michael Dudley; Ning Zhang; Yu Zhang; Balaji Raghothamachar; Sha Yan Byrapa; Gloria Choi; Edward Sanchez; Darren M. Hansen; Roman Drachev; Mark J. Loboda

doi:10.4028/www.scientific.net/MSF.645-648.291

Paper Titles

A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy
p.271

On the Luminescence and Driving Force of Stacking Faults in 4H-SiC
p.277

Systematic First Principles Calculations of the Effects of Stacking Fault Defects on the 4H-SiC Band Structure
p.283

In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate
p.287

Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density
p.291

Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy
p.295

Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC
p.299

Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers
p.303

Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers
p.307

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Characterization of 100 mm Diameter 4H-Silicon...

Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density

Abstract:

Synchrotron White Beam X-ray Topography (SWBXT) studies are presented of basal plane dislocation (BPD) configurations and behavior in a new generation of 100mm diameter, 4H-SiC wafers with extremely low BPD densities (3-4 x 102 cm-2). The conversion of non-screw oriented, glissile BPDs into sessile threading edge dislocations (TEDs) is observed to provide pinning points for the operation of single ended Frank-Read sources. In some regions, once converted TEDs are observed to re-convert back into BPDs in a repetitive process which provides multiple BPD pinning points.

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Materials Science Forum (Volumes 645-648)

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291-294

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.291

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April 2010

Authors:

Michael Dudley, Ning Zhang, Yu Zhang, Balaji Raghothamachar, Sha Yan Byrapa, Gloria Choi, Edward Sanchez, Darren M. Hansen, Roman Drachev, Mark J. Loboda

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Basal Plane Dislocation (BPD), Frank-Read Source

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