Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers

Jawad ul Hassan; Anne Henry; Peder Bergman

doi:10.4028/www.scientific.net/MSF.645-648.307

Paper Titles

Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density
p.291

Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy
p.295

Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC
p.299

Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers
p.303

Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers
p.307

Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates
p.311

Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy
p.315

Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers
p.319

Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process
p.323

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Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers

Abstract:

Two different and novel in-grown triangular stacking faults have been observed and characterized in 4H-SiC epitaxial layers grown on 4o off-cut substrates. The faults were formed at the beginning of the growth and extended continuously in size during the growth. Their structural and optical properties were however different as seen from both synchrotron white beam topography and low temperature photoluminescence. The luminescence spectra were similar but appeared in different energy regions 2.85 – 2.95 eV and 2.48 – 2.64 eV, respectively. BPDs present in the epilayer are found to be transformed into SFs under laser excitation during high resolution optically detected lifetime mapping. The faults are found to expand from the epilayer surface towards the epi-substrate interface. The optical spectrum from this fault is identical to the emission from the single layered Shockley stacking faults with excitonic bandgap of 3.034 eV previously only observed and formed in the bipolar diodes during forward voltage operation.