Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers

Abstract:

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Time-dependent evolutions of single and quadruple Shockley stacking faults (sSSF and 4SSF) in 4° off 4H-SiC epitaxial layers have been investigated. UV illuminations using an Hg-Xe lamp light source generate dissociations of basal plane dislocations (BPDs) into sSSFs whereas for 4SSFs no significant changes in shape occur. Detailed analyses of Photo-luminescence (PL) signals suggest that Si- and C-core partials have different PL spectrum distributions in the wavelength range larger than 750 nm, giving rise to images with different contrasts in PL mappings.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

319-322

DOI:

10.4028/www.scientific.net/MSF.645-648.319

Citation:

T. Fujimoto et al., "Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers", Materials Science Forum, Vols. 645-648, pp. 319-322, 2010

Online since:

April 2010

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$35.00

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