Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers

Tatsuo Fujimoto; Takashi Aigo; Masashi Nakabayashi; S. Satoh; Masakazu Katsuno; Hiroshi Tsuge; Hirokatsu Yashiro; Hosei Hirano; Taizo Hoshino; Wataru Ohashi

doi:10.4028/www.scientific.net/MSF.645-648.319

Paper Titles

Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers
p.303

Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers
p.307

Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates
p.311

Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy
p.315

Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers
p.319

Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process
p.323

Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers
p.327

Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes
p.331

Dislocation Activity in 4H-SiC in the Brittle Domain
p.335

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Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers

Abstract:

Time-dependent evolutions of single and quadruple Shockley stacking faults (sSSF and 4SSF) in 4° off 4H-SiC epitaxial layers have been investigated. UV illuminations using an Hg-Xe lamp light source generate dissociations of basal plane dislocations (BPDs) into sSSFs whereas for 4SSFs no significant changes in shape occur. Detailed analyses of Photo-luminescence (PL) signals suggest that Si- and C-core partials have different PL spectrum distributions in the wavelength range larger than 750 nm, giving rise to images with different contrasts in PL mappings.