Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers
Time-dependent evolutions of single and quadruple Shockley stacking faults (sSSF and 4SSF) in 4° off 4H-SiC epitaxial layers have been investigated. UV illuminations using an Hg-Xe lamp light source generate dissociations of basal plane dislocations (BPDs) into sSSFs whereas for 4SSFs no significant changes in shape occur. Detailed analyses of Photo-luminescence (PL) signals suggest that Si- and C-core partials have different PL spectrum distributions in the wavelength range larger than 750 nm, giving rise to images with different contrasts in PL mappings.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
T. Fujimoto et al., "Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers", Materials Science Forum, Vols. 645-648, pp. 319-322, 2010